JANSR2N7400
Formerly FSS230R4
January 2002
8A, 200V, 0.440 Ohm, Rad Hard,
N-Channel Power MOSFET
Description
The Discrete Products Operation of Fairchild Corporation
has developed a series of Radiation Hardened MOSFETs
specifically designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
BRAND
JANSR2N7400
Features
• 8A, 200V, r
DS(ON)
= 0.440Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Ordering Information
PART NUMBER
JANSR2N7400
PACKAGE
TO-257AA
Also available at other radiation and screening levels. See us
on
the
web,
Fairchild’s
home
page:
http://www.fairchildsemi.com. Contact your local Fairchild
Sales Office for additional information.
Die Family TA17637.
MIL-PRF-19500/632.
Symbol
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
©2002 Fairchild Semiconductor Corporation
JANSR2N7400 Rev. B
JANSR2N7400
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
JANSR2N7400
200
200
8
5
24
±20
50
20
0.40
24
8
24
-55 to 150
300
4.4
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
200
-
1.5
0.5
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V V
DD
= 100V,
I
D
= 8A,
V
GS
= 0V to 12V
V
GS
= 0V to 2V
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.320
-
-
-
-
-
-
33
-
7.8
17
-
-
MAX
-
5.0
4.0
-
25
250
100
200
3.70
0.440
0.744
65
160
120
90
64
42
3.1
12
22
2.5
60
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160V,
V
GS
= 0V
V
GS
=
±20V
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= 12V, I
D
= 8A
I
D
= 5A,
V
GS
= 12V
T
C
= 25
o
C
T
C
= 125
o
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Not on Slash Sheet)
Gate Charge at 12V
Threshold Gate Charge (Not on Slash Sheet)
Gate Charge Source
Gate Charge Drain
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
R
θ
JC
R
θ
JA
V
DD
= 100V, I
D
= 8A,
R
L
= 12.5Ω, V
GS
= 12V,
R
GS
= 7.5Ω
©2002 Fairchild Semiconductor Corporation
JANSR2N7400 Rev. B
JANSR2N7400
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 8A
I
SD
= 8A, dI
SD
/dt = 100A/µs
MIN
0.6
-
TYP
-
-
MAX
1.8
340
UNITS
V
ns
Electrical Specifications up to 100K R A D
C
= 25
o
C, Unless Otherwise Specified
T
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 8A
V
GS
= 12V, I
D
= 5A
MIN
200
1.5
-
-
-
-
MAX
-
4.0
100
25
3.70
0.440
UNITS
V
V
nA
µA
V
Ω
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
Br
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-5
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
200
200
160
100
40
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
©2002 Fairchild Semiconductor Corporation
JANSR2N7400 Rev. B
JANSR2N7400
Typical Performance Curves
240
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
LIMITING INDUCTANCE (HENRY)
1E-3
200
160
V
DS
(V)
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
120
80
40
0
0
TEMP = 25
o
C
-5
-10
-15
V
GS
(V)
-20
-25
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
50
T
C
= 25
o
C
10
8
I
D
, DRAIN CURRENT (A)
10
I
D
, DRAIN (A)
100µs
6
4
1ms
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
10ms
100ms
2
0
-50
0
50
100
150
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
, CASE TEMPERATURE (
o
C)
600
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2002 Fairchild Semiconductor Corporation
JANSR2N7400 Rev. B
JANSR2N7400
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 5A
2.0
12V
Q
G
NORMALIZED r
DS(ON)
1.5
Q
GS
V
G
Q
GD
1.0
0.5
0.0
-80
CHARGE
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
NORMALIZED THERMAL RESPONSE (Z
θ
JC
)
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
t
1
0.01
t
2
10
1
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
50
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
10
1
0.01
STARTING T
J
= 150
o
C
IF R = 0
t
AV
= (L) (I
AS
) /
(1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) /
(1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
©2002 Fairchild Semiconductor Corporation
JANSR2N7400 Rev. B
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