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MT48V4M32P-75MIT:G

产品描述Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
产品类别存储    存储   
文件大小6MB,共69页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
下载文档 详细参数 选型对比 全文预览

MT48V4M32P-75MIT:G概述

Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

MT48V4M32P-75MIT:G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码TSOP2
包装说明TSOP2,
针数54
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间5.4 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PDSO-G54
JESD-609代码e3
长度22.22 mm
内存密度134217728 bit
内存集成电路类型SYNCHRONOUS DRAM
内存宽度32
功能数量1
端口数量1
端子数量54
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织4MX32
封装主体材料PLASTIC/EPOXY
封装代码TSOP2
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距0.8 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度10.16 mm

文档预览

下载PDF文档
128Mb: x16, x32
MOBILE SDRAM
SYNCHRONOUS
DRAM
Features
• Temperature Compensated Self Refresh (TCSR)
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
• Auto Precharge, includes CONCURRENT auto
precharge, and Auto Refresh Modes
• Self Refresh Mode; standard and low power
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Low voltage power supply
• Partial Array Self Refresh power-saving mode
MT48LC8M16LFF4, MT48V8M16LFF4,
MT48LC8M16TG, MT48V8M16TG,
MT48V8M16P, MT48LC4M32LFF5,
MT48V4M32LFF5
Table 1:
Configuration
Refresh Count
Row Addressing
Bank
Addressing
Column
Addressing
Configurations
8 MEG X 16
2 Meg x 16 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
4 MEG X 32
1 Meg x 32 x 4
banks
4K
4K (A0–A11)
4 (BA0, BA1)
256 (A0–A7)
Table 2:
Key Timing Parameters
Options
• V
DD
/V
DD
Q
3.3V/3.3V
2.5V/2.5V – 1.8V
• Configurations
8 Meg x 16 (2 Meg x 16 x 4 banks)
4 Meg x 32 (1 Meg x 32 x 4 banks)
• Package/Ball out
54-ball VFBGA (8mm x 8mm)
1
54-ball VFBGA (8mm x 8mm)
1
Lead-Free
90-ball VFBGA (8mm x 13mm)
2
90-ball VFBGA (8mm x 13mm)
2
Lead-Free
54-Pin TSOP II (400 mil)
54-Pin TSOP II (400 mil) Lead-Free
• Timing (Cycle Time)
7.5ns @ CL = 3 (133 MHz)
8ns @ CL = 3 (125 MHz)
10ns @ CL = 3 (100 MHz)
• Temperature
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Extended (-25°C to +75°C)
• Design Revision
NOTE:
1. x16 only.
2. x32 only.
Marking
LC
V
8M16
4M32
F4
B4
F5
B5
TG
P
-75M
-8
-10
None
IT
XT
:G
CL = CAS (READ) latency
ACCESS TIME
SPEED
CLOCK
GRADE FREQUENCY CL = 1 CL = 2 CL = 3
t
RCD
-75M
-8
-10
-75M
-8
-10
-8
-10
133MHz
125 MHz
100 MHz
100MHz
100 MHz
83 MHz
50 MHz
40 MHz
-
-
19ns
22ns
-
6
8ns
8ns
5.4
7ns
7ns
-
19ns
20ns
20ns
19ns
20ns
20ns
20ns
20ns
t
RP
19ns
20ns
20ns
19ns
20ns
20ns
20ns
20ns
Part Number Example:
MT48V8M16LFB4-8
09005aef8071a76b
128Mbx16x32Mobile_1.fm - Rev. J 3/05 EN
1
©2001 Micron Technology, Inc. All rights reserved.

MT48V4M32P-75MIT:G相似产品对比

MT48V4M32P-75MIT:G MT48V4M32P-10:G MT48V4M32P-10IT:G MT48V4M32P-75MXT:G MT48V4M32P-8IT:G MT48V4M32P-8XT:G MT48V4M32P-8:G MT48V4M32P-10XT:G MT48V4M32P-75M:G
描述 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology Micron Technology
零件包装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
包装说明 TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2, TSOP2,
针数 54 54 54 54 54 54 54 54 54
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5.4 ns 7 ns 7 ns 5.4 ns 7 ns 7 ns 7 ns 7 ns 5.4 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 代码 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54 R-PDSO-G54
JESD-609代码 e3 e3 e3 e3 e3 e3 e3 e3 e3
长度 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
内存密度 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1
端子数量 54 54 54 54 54 54 54 54 54
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 75 °C 85 °C 75 °C 70 °C 75 °C 70 °C
最低工作温度 -40 °C - -40 °C -25 °C -40 °C -25 °C - -25 °C -
组织 4MX32 4MX32 4MX32 4MX32 4MX32 4MX32 4MX32 4MX32 4MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度) 260 260 260 260 260 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES YES YES YES
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL EXTENDED INDUSTRIAL COMMERCIAL EXTENDED COMMERCIAL COMMERCIAL EXTENDED COMMERCIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 30 30
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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