Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
参数名称 | 属性值 |
包装说明 | , |
Reach Compliance Code | unknow |
配置 | Single |
最大漏极电流 (Abs) (ID) | 1.5 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 20 W |
表面贴装 | YES |
Base Number Matches | 1 |
2SK1151(S)-(2) | 2SK1151(S)-(1) | 2SK1151(S)-(3) | 2SK1152(L)-(1) | 2SK1152(S)-(3) | 2SK1152(S)-(2) | |
---|---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
配置 | Single | Single | Single | Single | Single | Single |
最大漏极电流 (Abs) (ID) | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 20 W | 20 W | 20 W | 20 W | 20 W | 20 W |
表面贴装 | YES | YES | YES | NO | YES | YES |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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