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UM2100_09

产品描述100 V, SILICON, PIN DIODE
产品类别半导体    分立半导体   
文件大小267KB,共7页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 选型对比 全文预览

UM2100_09概述

100 V, SILICON, PIN DIODE

100 V, 硅, PIN二极管

UM2100_09规格参数

参数名称属性值
最小击穿电压100 V
状态ACTIVE
端子涂层锡 铅
工艺POSITIVE-INTRINSIC-负
二极管元件材料
最大功耗极限25 W
二极管类型PIN二极管
最大二极管电容2.5 pF
最大二极管正向电阻2 ohm
少数载流子寿命额定值60 us

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UM2100
TM
®
ATTENUATOR AND POWER PIN DIODES
2 – 30 MHz
RoHS Compliant Versions Available
DESCRIPTION
UM2100 Series PIN diodes are designed for transmit/receive switch
and attenuator applications in HF band (2-30MHz) and below. As
series configured switches, these long lifetime (25μs typical) diodes
can control up to 2.5 kW, CW in a 50 ohm system. In HF band,
insertion loss is less than 0.25dB and isolation is greater than 32dB
(off-state).
The UM2100 series offers the lowest distortion performance in both
transmit and receive modes. Less than 50 mA forward bias is requires
to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The
forward biased resistance/reactance vs. frequency characteristics are
flat down to 10 kHz. The capacitance vs. reverse bias voltage
characteristic is flat down to 2 MHz. In attenuator configuration, the
UM2100 produces extremely low distortion at low values of attenuator
control current, and very low insertion loss (0.2dB) in the “0dB”
attenuator state.
KEY FEATURES
HF band (2-30 MHz) PIN
www.MICROSEMI.com
Long Lifetime (25μs typical)
High Power ( 1kW, CW)
High Isolation (32dB)
Low Loss (0.25dB)
Very Low Distortion
(IP3=60dBm)
Voltage ratings to 1000 V
RoHS compliant packaging
1
Available
(use UMX2101B, etc.)
IMPORTANT:
For the most current data, consult our website:
www.MICROSEMI.com
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Package
A
B
E
C
D
SM
ALL
ALL
ALL
O
Conditions
25 C Pin Temperature
½ in. total length to 25 C
Contact Free Air
25 C Stud Temperature
25 C Stud Temperature
25 C End Cap Temperature
1 us pulse (Single)
Storage Temperature (T
OP
)
Operating Temperature (T
OP
)
O
O
O
(P
D
) Power
Dissapation
(W)
25
12
2.5
25
18.75
15
100KW
(
Θ
)Thermal
Resistance
(
O
C/W)
50V
12.5
The UM2100 series of products can be
supplied with a RoHS compliant finish
(UMX2100) or with a 90/10 Sn/Pb finish.
Consult factory for details.
1
O
6
8
10
APPLICATIONS/BENEFITS
Isolated stud package available
Surface mount package available
Soldering temperature:
o
260 C for 10 seconds
maximum
UM2100
UM2100
-65
O
C to + 175
O
C
-65
O
C to + 175
O
C
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page
1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

UM2100_09相似产品对比

UM2100_09 UM2102 UM2106 UM2110 UM2104 UM2108 UM2101
描述 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE 100 V, SILICON, PIN DIODE
最小击穿电压 100 V 200 V 600 V 1000 V 400 V 800 V 100 V
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 PIN二极管 PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE PIN DIODE
最大二极管电容 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF 2.5 pF
最大二极管正向电阻 2 ohm 2 Ω 2 Ω 2 Ω 2 Ω 2 Ω 2 Ω
是否无铅 - 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 - 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 - Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
Reach Compliance Code - compli compli compli compli compli compli
ECCN代码 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609代码 - e0 e0 e0 e0 e0 e0
少数载流子标称寿命 - 60 µs 60 µs 60 µs 60 µs 60 µs 60 µs
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大功率耗散 - 25 W 25 W 25 W 25 W 25 W 25 W
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
技术 - POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE POSITIVE-INTRINSIC-NEGATIVE
端子面层 - TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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