PZT3019
Elektronische Bauelemente
RoHS Compliant Product
NPN Transistor
Epitaxial Planar
Transistor
SOT-223
Description
The PZT3019 is designed for general
purpose amplifier applications and
switching requiring collector currents 1A.
REF.
3 0 1 9
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Ta=25
C
Parameter
Value
140
80
7
1
2
-55~+150
Units
V
V
V
A
W
O
o
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE
1
h
FE
2
h
FE
3
h
FE
4
h
FE
5
Min
140
80
7
-
-
-
-
50
90
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
50
50
0.2
1.1
-
-
300
-
-
-
12
Unit
V
V
V
nA
nA
V
V
Test Conditions
I
C
=100µA
I
C
=30mA
I
E
=100
µA
V
CB
= 90V
V
EB
=5V
I
C
=150mA,I
B
=15mA
I
C
=150mA,I
B
=15mA
V
CE
= 10 V, I
C
=0.1mA
V
CE
= 10 V, I
C
=10mA
V
CE
= 10 V, I
C
=150 mA
V
CE
= 10 V, I
C
=500mA
V
CE
= 10 V, I
C
=1000mA
DC Current Gain
50
15
100
-
Gain-Bandwidth Product
Output Capacitance
fT
C
ob
MH z
pF
V
CE
= 50mV, I
C
= 50mA,f=100MHz
V
CB
= 10 V , f=1MHz,I
E
=0
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
1
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