1MX4 FAST PAGE DRAM, 120ns, CDIP20, 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP20,.4 |
| 针数 | 20 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE |
| 最长访问时间 | 120 ns |
| 其他特性 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-CDIP-T20 |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | FAST PAGE DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 20 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 1MX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.4 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 1024 |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 3.556 mm |
| 自我刷新 | NO |
| 最大待机电流 | 0.004 A |
| 最大压摆率 | 0.065 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 10.16 mm |
| SMJ44400-12JDM | SMJ44400-80JDM | SMJ44400-80HJM | SMJ44400-10JDM | SMJ44400-10HJM | SMJ44400-12HJM | |
|---|---|---|---|---|---|---|
| 描述 | 1MX4 FAST PAGE DRAM, 120ns, CDIP20, 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20 | 1MX4 FAST PAGE DRAM, 80ns, CDIP20, 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20 | 1MX4 FAST PAGE DRAM, 80ns, CDSO20, CERAMIC, SOJ-20 | 1MX4 FAST PAGE DRAM, 100ns, CDIP20, 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20 | 1MX4 FAST PAGE DRAM, 100ns, CDSO20, CERAMIC, SOJ-20 | 1MX4 FAST PAGE DRAM, 120ns, CDSO20, CERAMIC, SOJ-20 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DIP | SOJ | DIP | SOJ | SOJ |
| 包装说明 | DIP, DIP20,.4 | 0.400 INCH, SIDE BREAZED, CERAMIC, DIP-20 | CERAMIC, SOJ-20 | DIP, DIP20,.4 | SOJ, SOJ20/26,.34 | SOJ, SOJ20/26,.34 |
| 针数 | 20 | 20 | 20 | 20 | 20 | 20 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| 最长访问时间 | 120 ns | 80 ns | 80 ns | 100 ns | 100 ns | 120 ns |
| 其他特性 | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH | RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-CDIP-T20 | R-CDIP-T20 | R-CDSO-J20 | R-CDIP-T20 | R-CDSO-J20 | R-CDSO-J20 |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 | 20 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 1MX4 | 1MX4 | 1MX4 | 1MX4 | 1MX4 | 1MX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | SOJ | DIP | SOJ | SOJ |
| 封装等效代码 | DIP20,.4 | DIP20,.4 | SOJ20/26,.34 | DIP20,.4 | SOJ20/26,.34 | SOJ20/26,.34 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| 座面最大高度 | 3.556 mm | 3.556 mm | 3.56 mm | 3.556 mm | 3.56 mm | 3.56 mm |
| 自我刷新 | NO | NO | NO | NO | NO | NO |
| 最大待机电流 | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A | 0.004 A |
| 最大压摆率 | 0.065 mA | 0.085 mA | 0.085 mA | 0.075 mA | 0.075 mA | 0.065 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | NO | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE | J BEND | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 10.16 mm | 10.16 mm | 8.382 mm | 10.16 mm | 8.382 mm | 8.382 mm |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
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