Elektronische Bauelemente
FEATURES
n
BC856A, B
BC857A, B, C
BC858A, B, C
SOT-23
A
L
Top View
3
A suffix of "-C" specifies halogen & lead-free
General Purpose Transistor PNP Type
Collect current : - 0.1A
Operating Temp. : -55 C ~ +150 C
O
O
Dim
A
B S
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
n
n
B
C
D
G
H
n
RoHS com pliant product
V
3
1
2
1
2
C OLLE C TOR
G
C
D
H
K
J
3
1
B AS E
J
K
L
S
V
2
E MITTE R
All Dimension in mm
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Tamb=25
unless
Symbol
otherwise
Test
specified
MIN
-80
MAX
UNIT
conditions
BC856
BC857
BC858
V
CBO
Ic= -10
A
I
E
=0
-50
-30
-65
V
Collector-emitter breakdown voltage
BC856
BC857
BC858
V
CEO
Ic= -10 mA
I
B
=0
-45
-30
V
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
Collector cut-off current
BC856
BC857
BC858
Emitter cut-off current
DC current gain
BC856A,857A,858A
BC856B,857B,858B
BC857C,BC858C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
EBO
I
E
= -10
A
I
C
=0
I
E
=0
I
E
=0
I
E
=0
I
B
=0
I
B
=0
I
B
=0
I
C
=0
-5
V
V
CB
= -70 V ,
I
CBO
V
CB
= -45 V ,
V
CB
= -25 V ,
V
CE
= -60 V ,
I
CEO
V
CE
= -40 V ,
V
CE
= -25 V ,
I
EBO
V
EB
= -5 V ,
-0.1
A
-0.1
A
-0.1
125
250
475
800
-0.5
-1.1
A
H
FE
1
V
CE
= -5V,
I
C
= -2mA
220
420
V
CE
(sat)
V
BE
(sat)
I
C
=-100mA, I
B
= -5 mA
I
C
= -100 mA, I
B
= -5mA
V
CE
= -5 V,
I
C
= -10mA
100
V
V
Transition frequency
f
T
f=
100MHz
MHz
DEVICE MARKING
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G; BC858A=3J; BC858B=3K; BC858C=3L
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 1 of 3
Elektronische Bauelemente
BC856A, B
BC857A, B, C
BC858A, B, C
BC857, BC858
−1.0
Typical Characteristics
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= −10 V
T
A
= 25°C
−0.9
−0.8
V, VOLTAGE (VOLTS)
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −10 V
0.3
0.2
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50
−100
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
I
C
, COLLECTOR CURRENT (mAdc)
−100 −200
0
−0.1 −0.2
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
−2.0
T
A
= 25°C
−1.6
−1.2
I
C
=
−10 mA
I
C
= −50 mA
I
C
= −20 mA
I
C
= −200 mA
I
C
= −100 mA
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.8
−0.4
0
−0.02
−0.1
−1.0
I
B
, BASE CURRENT (mA)
−10 −20
−0.2
−10
−1.0
I
C
, COLLECTOR CURRENT (mA)
−100
Figure 3. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 4. Base-Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ob
C
ib
T
A
= 25°C
400
300
200
150
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
V
CE
= −10 V
T
A
= 25°C
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
http://www.SeCoSGmbH.com
Figure 6. Current-Gain - Bandwidth Product
Any changing of specification will not be informed individual
01-Jun-2004 Rev.
B
Page 2 of 3
Elektronische Bauelemente
BC856A, B
BC857A, B, C
BC858A, B, C
BC856
−1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= −5.0 V
T
A
= 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE
@ V
CE
= −5.0 V
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−2.0
−1.0
−1.6
I
C
=
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−1.4
−1.2
−1.8
θ
VB
for V
BE
−55°C to 125°C
−0.8
−2.2
−0.4
T
J
= 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
I
B
, BASE CURRENT (mA)
−5.0
−10
−20
−2.6
−3.0
−0.2
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mA)
−100 −200
Figure 9. Collector Saturation Region
Figure 10. Base-Emitter Temperature Coefficient
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= −5.0 V
200
100
50
20
−100
−1.0
−10
I
C
, COLLECTOR CURRENT (mA)
10
8.0
6.0
4.0
2.0
−0.1 −0.2
C
ob
−0.5
−5.0 −10 −20
−1.0 −2.0
V
R
, REVERSE VOLTAGE (VOLTS)
−50 −100
Figure 11. Capacitance
http://www.SeCoSGmbH.com
Figure 12. Current-Gain - Bandwidth Product
Any changing of specification will not be informed individual
01-Jun-2004 Rev.B
Page 3 of 3
This datasheet has been downloaded from:
www.EEworld.com.cn
Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
