SEMiX703GAL126HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
642
449
450
900
-20 ... 20
10
-40 ... 150
561
384
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2900
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
533
367
450
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
2900
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX703GAL126HDs
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 450 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
5
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
32.3
1.69
1.46
3600
1.67
1.7
2
1
0.9
1.6
2.4
5.8
0.1
2.1
2.45
1.2
1.1
2.0
3.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 18 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAL
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX703GAL126HDs
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
Conditions
V
CC
= 600 V
I
C
= 450 A
R
G on
= 1.6
Ω
R
G off
= 1.6
Ω
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
per IGBT
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
= 450 A
T
j
= 125 °C
di/dt
off
= 8500 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
= 450 A
T
j
= 125 °C
di/dt
off
= 8500 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
min.
typ.
310
60
32
680
135
68
max.
Unit
ns
ns
mJ
ns
ns
mJ
SEMiX 3s
Trench IGBT Modules
SEMiX703GAL126HDs
®
R
th(j-c)
0.061
1.6
1.6
0.9
0.7
1.1
1.6
1
0.8
1.3
1.8
580
130
60
0.11
1.7
1.7
0.9
0.7
1.3
1.8
1
0.8
1.5
2.1
580
130
60
0.11
20
1.9
1.9
1.1
0.9
1.8
2.3
1.80
1.8
1.1
0.9
1.6
2.0
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
K/W
Inverse diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Freewheeling diode
V
F
= V
EC
I
F
= 450 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
res., terminal-chip
per module
to heat sink (M5)
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
Ω
K
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
GAL
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX703GAL126HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX703GAL126HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX703GAL126HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5
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