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TS4B06GX2

产品描述Bridge Rectifier Diode, 4A, 800V V(RRM),
产品类别分立半导体    二极管   
文件大小210KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

TS4B06GX2概述

Bridge Rectifier Diode, 4A, 800V V(RRM),

TS4B06GX2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
Reach Compliance Codecompliant
ECCN代码EAR99
配置BRIDGE, 4 ELEMENTS
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1 V
最大非重复峰值正向电流120 A
元件数量4
最高工作温度150 °C
最大输出电流4 A
最大重复峰值反向电压800 V
表面贴装NO

TS4B06GX2文档预览

TS4B01G thru TS4B07G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- UL Recognized File # E-326243
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength of 2000VRMS
- Reliable low cost construction
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
TS4B
MECHANICAL DATA
Case:TS4B
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:Polarity
as marked on the body
Mounting torque:5
in-lbs maximum
Weight:4
gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3mS)
Maximum instantaneous forward voltage (Note 1)
@2A
@4A
Maximum DC reverse current
at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
T
V
F
TS4B
01G
50
35
50
TS4B
02G
100
70
100
TS4B
03G
200
140
200
TS4B
04G
400
280
400
4
120
60
1.0
1.1
5
500
5.5
- 55 to + 150
- 55 to + 150
O
TS4B
05G
600
420
600
TS4B
06G
800
560
800
TS4B
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
sec
V
I
R
R
θJC
T
J
T
STG
uA
C/W
O
O
C
C
Document Number:DS_D1311042
Version:F13
TS4B01G thru TS4B07G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
C2
TS4B0xG
(Note 1)
X0
D2
X2
Note 1: "x" defines voltage from 50V (TS4B01G) to 1000V (TS4B07G)
Suffix "G"
GREEN COMPOUND
CODE
TS4B
TS4B
TS4B
TS4B
20 / TUBE
Forming
20 / TUBE
Forming
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
TS4B01G C2
TS4B01G C2G
PART NO.
TS4B01G
TS4B01G
PACKING CODE
C2
C2
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT
DERATING CURVE
5
4
3
2
1
0
0
50
100
150
CASE TEMPERATURE (
o
C)
INSTANTANEOUS REVERSE CURRENT (uA)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100
TJ=100℃
AVERAGE FORWARD
A
CURRENT (A)
10
1
TJ=25℃
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
175
PEAK FORWARD SURGE CURRENT (A)
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3mS Single Half Sine Wave
JEDEC Method
10
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
1
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE (V)
Document Number:DS_D1311042
Version:F13
TS4B01G thru TS4B07G
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
J UNCTION CAPACITANCE (pF)
A
900
800
700
600
500
400
300
200
100
0
0.1
1
10
100
1000
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
Unit(mm)
Min
24.70
0.90
1.80
14.70
3.96
17.00
7.30
3.30
3.10
9.30
1.52
0.55
Max
25.30
1.10
2.20
15.30
4.37
18.00
7.70
3.70
3.40
9.70
1.73
0.75
Unit(inch)
Min
0.972
0.035
0.071
0.579
0.156
0.669
0.287
0.130
0.122
0.366
0.060
0.022
Max
0.996
0.043
0.087
0.602
0.172
0.709
0.303
0.146
0.134
0.382
0.068
0.030
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number:DS_D1311042
Version:F13
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