IDT Confidential
®
Temperature Sensor with
Integrated EEPROM for Memory
Modules
Features
•
•
•
•
•
•
TSE2002B3C
Data Sheet
Advance Information*
Description
The TSE2002B3C digital temperature sensor with accuracy up to
±0.5°C was designed to target applications demanding highest level of
temperature readout. The device also contains 256 Byte EEPROM for
storage of vendor information and system configuration such as SPD for
DIMM modules. The sensor and the EEPROM are fully compliant with
JEDEC JC42.4 Component Specification.
The digital temperature sensor comes with several user-programmable
registers to provide maximum flexibility for temperature-sensing
applications. The registers allow specifying critical, upper, and lower
temperature limits as well as hysteresis settings. Both the limits and
hysteresis values are used for communicating temperature events from
the chip to the system. This communication is done using Event pin,
which has an open-drain configuration. The user has the option of setting
the Event pin polarity as either an active-low or active-high comparator
output for thermostat operation, or as a temperature event interrupt
output for microprocessor-based systems.
The sensor uses an industry standard 2-wire, I2C/SMBus serial
interface, and allows up to eight devices to be controlled on the bus.
The 2Kbit (256 Bytes) serial EEPROM memory in the part is organized
as a single block. Half the bytes in memory locations 00h to 7Fh can be
permanently locked with user defined or vendor defined information. The
protected data could also contain system information such as access
speed, size, and organization. The 128 bytes in addresses from 80h to
FFh can be used for general purpose data storage. These addresses are
not write-protected.
Temperature Sensor + 256 Byte Serial EEPROM
256 Byte Serial EEPROM for SPD
Single Supply: 3V to 3.6V
Accurate timeout support
- Meets strict SMBus spec of 25ms (min), 35ms (max)
•
•
•
•
•
•
•
•
Temperature Sensor Features
Temperature Converted to Digital Data
Sampling Rate of 100ms (max)
Selectable 0, 1.5°C, 3°C, 6°C Hysteresis
Programmable Resolution from 0.0625°C to 0.5°C
Accuracy:
– ±0.5°C/±1°C (typ./max.) from -20°C to +125°C
Serial EEPROM Features
•
•
•
•
•
•
•
•
•
•
•
Permanent and Reversible Software Write Protect
Software Write Protection for the lower 128 bytes
Byte and page write (up to 16 bytes)
Self-time Write cycle
Automatic address incrementing
Organized as 1 block of 256 bytes (256x8)
Memory Module Temp Sensor Application
Memory
Module
CPU
DRAMs
(for memory
throttling)
Typical Applications
Temperature
sensor and
EEPROM
EVENT#
Chipset
SMBus
DIMM Modules (DDR2, DDR3)
Servers, Laptops, Ultra-portables, PCs, etc.
High end audio / video equipment
Industrial temperature monitors
Hard Disk Drives and Other PC Peripherals
MCH
Memory
Bus
DRAMs
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
1 of 30
©
2010 Integrated Device Technology, Inc.
*Notice: The information in this document is subject to change without notice
May 12, 2010
DSC 7210/17
Advance Information
Timeout supported for Temp Sensor and EEPROM
Timeout supported in all Modes
– Active mode for Temp sensor and EEPROM
– EEPROM in standby or Temp sensor in shutdown
– EEPROM in standby and Temp sensor in shutdown
Schmitt trigger and noise filtering on bus inputs
2-wire Serial Interface: 10-400 kHz I2C™ /SMBus™
Available Packages: DFN-8, TDFN-8
IDT Confidential
Block Diagram: Temperature Sensor with EEPROM
VDD
Temperature Registers
T
UPPER
T
LOWER
T
Chipset
CRIT
Resolution
Capability and ID Registers
Temperature Range
Accuracy
MCH
Event Feature
Resolution Support
Manufacturer ID
Device ID
Configuration Registers
Resolution
Hysteresis
Event Status
Event Polarity
Event Mode
Critical Event Only
Clear Event
Alarm Window Lock
Shutdown
Output Control
Temperature
Sensor
Up to
0.5°C accuracy
ADC
Control
Logic
EVENT
SCL
SDA
A0
A1
A2
SMBus / I
2
C
Interface
2Kb EEPROM
with
Write Protect
GND
2 of 30
May 12, 2010
Advance Information
IDT Confidential
Maximum Ratings
Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not
implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
Symbol
T
STG
V
IO
V
DDSPD
Parameter
Storage Temperature
Input or output range, SA0
Input or output range, other pins
Supply Voltage
Min.
-65
-0.50
-0.50
-0.5
Max.
150
10
4.3
4.3
Units
°C
V
V
V
DC and AC Parameters
Operating Conditions
Symbol
V
DDSPD
T
A
Parameter
Supply Voltage
Ambient operating temperature
Min.
3.0
-20
Max.
3.6
125
Units
V
°C
3 of 30
May 12, 2010
Advance Information
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC
and AC Characteristic tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables.
Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. DC
Characteristics
IDT Confidential
AC Measurement Conditions
Symbol
C
L
Parameter
Load capacitance
Input rise and fall times
Input levels
Input and output timing reference levels
Min.
100
Max.
50
Units
pF
ns
V
V
0.2*V
DDSPD
to 0.8*V
DDSPD
0.3*V
DDSPD
to 0.7*V
DDSPD
AC Measurement I/O Waveform
Input Parameters for the TSE2002B3C
Symbol
C
IN
C
IN
Z
EIL
Z
EIH
t
SP
Parameter
1,2
Input capacitance (SDA)
Input rise and fall times
Ei (SA0,SA1,SA2) input impedance
Ei (SA0,SA1,SA2) input impedance
Pulse width ignored (input filter on
SCL and SDA)
Test Condition
Min.
Max.
8
6
Units
pF
ns
kΩ
kΩ
V
IN
< 0.3* V
DDSPD
V
IN
> 0.7* V
DDSPD
Single glitch, f < 100 KHz
Single glitch, f> 100 KHz
30
800
100
50
ns
1.T
A
=25°C, f=400 kHz
2.Verified by design and characterization not necessarily tested on all devices
4 of 30
May 12, 2010
Advance Information
IDT Confidential
DC Characteristics
Parameter
Input Leakage Current (SCL, SDA)
Output Leakage Current
Supply Current, temp sensor
converting, EEPROM write
Supply Current, temp sensor shut
down, EEPROM write
Supply Current, temp sensor shut
down, EEPROM read
Supply Current, temp sensor
converting, EEPROM standby
Standby Supply Current
Input Low Voltage (SCL, SDA)
Input High Voltage (SCL, SDA)
SA0 High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
I
DD
I
DD1
I
DD2
I
DD3
I
DD4
V
IL
V
IH
V
HV
V
OL
Conditions
V
IN
= V
SSSPD
or V
DDSPD
V
OUT
= V
SSSPD
or V
DDSPD
,
SDA in Hi-Z
V
DDSPD
= 3.3 V, f
C
= 100 kHz
(rise/fall time < 30 ns)
V
DDSPD
= 3.3 V, f
C
= 100 kHz
(rise/fall time < 30 ns)
V
DDSPD
= 3.3 V, f
C
= 100 kHz
(rise/fall time < 30 ns)
V
DDSPD
= 3.3 V, f
C
= 100 kHz
(rise/fall time < 30 ns)
V
IN
= V
SSSPD
or V
DDSPD
,
V
DDSPD
= 3.6 V
Min.
Max.
±5
±5
2
1.5
0.5
0.5
100
Units
μA
μA
mA
mA
mA
mA
μA
0.7* V
DDSPD
V
HV
- V
DDSPD
> 4.8 V
I
OL
= 2.1 mA,
3 V =< V
DDSPD
=< 3.6 V
I
OL
= 0.7 mA,
V
DDSPD
= 1.7 - 3.6 V
7
V
DDSPD
+1
10
0.4
0.2
V
V
V
V
V
Input hysteresis
V
HYST
V
DDSPD
> 2.2V
0.05
*
V
DDSPD
__
5 of 30
May 12, 2010
Advance Information
-0.5
0.3*V
DDSPD
V
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
