Preliminary
Datasheet
BCR08DS-14A
Triac
Low Power Use
Features
I
T (RMS)
: 0.8 A
V
DRM
:700 V
I
FGTI
, I
RGTI
, I
RGTIII
: 5 mA
Planar Passivation Type
Surface Mounted Type
Completed Pb Free
R07DS0258EJ0100
Rev.1.00
Mar 30, 2011
Outline
RENESAS Package code: PRSP0004ZA-A
(Package name: SOT-223)
2, 4
4
3
2
1
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non- repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Voltage class
14
700
840
Unit
V
V
Ratings
0.8
8
0.26
1
0.1
6
0.5
–40 to +125
–40 to +125
0.12
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc= 96°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 1 of 6
BCR08DS-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
0.5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
2.0
2.0
2.0
2.0
5
5
5
—
25
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/s
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 1.2 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25°C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125°C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125°C
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab..
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –0.4 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 2 of 6
BCR08DS-14A
Preliminary
Performance Curves
Maximum On-State Characteristics
10
1
Tj = 25°C
10
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
8
6
10
0
4
2
10
−1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
10
1
V
GM
= 6V
V
GT
= 2V
P
G(AV)
=
0.1W
P
GM
= 1W
Gate Voltage (V)
10
0
I
FGT I
,
I
RGT I
, I
RGT III
I
GM
=
0.5A
10
2
10
−1
V
GD
= 0.2V
10
1
10
2
10
3
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
30
25
20
15
10
5
0
10
−1
10
3
10
4
Typical Example
10
2
10
1
–40
0
40
80
120
160
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 3 of 6
BCR08DS-14A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless of
conduction angle
Maximum On-State Power Dissipation
2.0
On-State Power Dissipation (W)
1.6
Case Temperature (°C)
140
120
100
80
60
40
20
0
1.2
0.8
360°
Conduction
Resistive,
inductive loads
0.4
360°
Conduction
Resistive,
inductive loads
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.2
0.4
0.6
0.8
1.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
5
Typical Example
10
4
10
2
10
3
10
–40
2
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
10
2
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Typical Example
Distribution
Latching Current (mA)
T
2
+, G–
Typical Example
10
1
10
0
10
−1
T
2
+, G+
Typical Example T –, G–
2
Typical Example
0
40
80
120
160
–40
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 4 of 6
BCR08DS-14A
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Preliminary
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Commutation Characteristics (Tj=125°C)
10
1
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
140
120
100
80
60
40
20
0
10
0
10
1
Typical Example
Tj = 125°C
Typical Example
Conditions
V
D
= 200V
I
T
= 1A
τ
= 500μs
Tj = 125°C
III Quadrant
10
0
I Quadrant
I Quadrant
III Quadrant
Minimum
Characteristics
Value
10
2
10
3
10
−1
10
−1
10
0
10
1
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
I
RGT III
Typical Example
Gate Trigger Characteristics Test Circuits
6
6
6V
V
10
2
I
FGT I
I
RGT I
A
R
G
6V
V
A
R
G
Test Procedure I
6
Test Procedure II
10
1 0
10
6V
10
1
10
2
A
V
R
G
Gate Current Pulse Width (μs)
Test Procedure III
R07DS0258EJ0100 Rev.1.00
Mar 30, 2011
Page 5 of 6
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
