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Datasheet> 器件分类 > 分立半导体> 二极管> S-LESDA6V1LT1G
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S-LESDA6V1LT1G

产品描述Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,
产品类别分立半导体    二极管   
文件大小348KB，共5页
制造商LRC
官网地址http://www.lrc.cn
下载文档 详细参数 选型对比 全文预览

S-LESDA6V1LT1G概述

Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,

S-LESDA6V1LT1G规格参数

参数名称属性值
厂商名称LRC
包装说明R-PDSO-G3
Reach Compliance Codeunknown
ECCN代码EAR99
最大击穿电压7.2 V
最小击穿电压6.1 V
配置COMMON ANODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码R-PDSO-G3
最大非重复峰值反向功率耗散300 W
元件数量2
端子数量3
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性UNIDIRECTIONAL
参考标准AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压5.25 V
表面贴装YES
技术AVALANCHE
端子形式GULL WING
端子位置DUAL

S-LESDA6V1LT1G文档预览

LESHAN RADIO COMPANY, LTD.
Dual transil array for ESD protection
General Description
The LESDA5V3LT1G is a dual monolithic voltage
suppressor designed to protect components which
are connected to data and transmission lines against
ESD. It clamps the voltage just above the logic level
supply for positive transients, and to a diode drop
below ground for negative transients. It can also
work as bidirectionnal suppressor by connecting
only pin1 and 2.
LESDA5V3LT1G
S-LESDA5V3LT1G
LESDA6V1LT1G
S-LESDA6V1LT1G
LESDA14V2LT1G
S-LESDA14V2LT1G
LESDA25VLT1G
S-LESDA25VLT1G
3
Applications
Computers
Printers
Communication systems
It is particulary recommended for the RS232 I/O
port protection where the line interface withstands
only with 2kV ESD surges.
1
2
SOT– 23
Features
2 Unidirectional Transil functions
Low leakage current: I
R
max< 20
μA
at VBR
3 00W peak pulse power(8/20μs)
High ESD protection level: up to 25 kV
S- Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change
Requirements; AEC-Q101 Qualified and PPAP Capable.
Benefits
High ESD protection level
up to 25 kV. High integration.
Suitable for high density boards.
O rdering Information
Device
LESDA5V3LT1G,S-LESDA5V3LT1G
LESDA5V3LT3G,S-LESDA5V3LT3G
LESDA6V1LT1G,S-LESDA6V1LT1G
LESDA6V1LT3G,S-LESDA6V1LT3G
LESDA14V2LT1G,S-LESDA14V2LT1G
LESDA14V2LT3G,S-LESDA14V2LT3G
LESDA25VLT1G,S-LESDA25VLT1G
LESDA25VLT3G,S-LESDA25VLT3G
Marking
E53
E53
E61
E61
E14
E14
E25
E25
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Complies with the following standards
IEC61000-4-2
Level 4
MIL STD 883c - Method 3015-6 Class 3
(Human Body Model)
Absolute Ratings (T
amb
=25
°C )
Symbol
Parameter
Value
Units
P
PP
T
L
T
stg
T
op
T
j
Peak Pulse Power (t
p
= 8/20μs)
Maximum lead temperature for soldering during 10s
Storage Temperature Range
Operating Temperature Range
Maximum junction temperature
Electrostatic discharge
MIL STD 883C -Method 3015-6
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
300
260
-55 to +15
-40 to +125
150
25
16
9
W
°C
°C
°C
°C
V
PP
kv
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Electrical Parameter
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
C
R
d
Parameter
Stand-off voltage
Breakdown
voltage
Clamping
voltage
Leakage
current
Peak
pulse current
Voltage
temperature coefficient
Forward voltage drop
Capacitance
Dynamic
resistance
Electrical Characteristics
Part Numbers
Min.
v
LESDA5V3LT1G
LESDA6V1LT1G
LESDA14V2LT1G
LESDA25VLT1G
V
BR
Max.
v
5.9
7.2
15.8
30
V
RM
v
3
5.25
12
24
I
RM
µA
2
20
5
1
V
F
Max.
v
1.25
1.25
1.25
1.2
I
F
mA
200
200
200
10
R
d
Typ.
(1)
mΩ
280
350
650
1000
αT
Max.
(2)
10
-4
/°C
5
6
10
10
C
Typ. 0v bias
pF
220
140
90
50
5.3
6.1
14.2
25
1.Square
pulse I
PP
=15A,t
p
=2.5µs
2.△V
BR
=aT*(T
amb
-25°C)*V
BR
(25°C)
Typical Characteristics
Fig1.Peak power dissipation versus
Initial junction temperature
Fig2. Peak pulse power versus exponential
pulse duration(T
j
initial=25°C)
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Fig3. Clamping voltage versus peak
pulse current(T
j
initial=25°C,
rectangular Waveform,t
p
=2.5
μ
s)
Fig4. Capacitance versus reverse
Applied voltage
Fig5.Relative variation of leakage current
Versus junction temperature
Application Note
Fig6. Peak forward voltage drop versus
peak forward current
Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage
Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient
to a low enough level such that damage to the protected
semiconductor is prevented.
Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel
protection elements, connected between the signal line to ground. As the transient rises above the operating
voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground.
The ESDAxxL array is the ideal board evel protection of ESD sensitive semiconductor components.
The tiny SOT23 package allows design flexibility in the design of high density boards where the space
saving is at a premium. This enables to shorten the routing and contributes to hardening againt ESD.
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G
S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
C
D
H
K
J
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 5/5
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S-LESDA6V1LT1G相似产品对比

S-LESDA6V1LT1G S-LESDA14V2LT3G S-LESDA14V2LT1G S-LESDA5V3LT3G S-LESDA5V3LT1G S-LESDA6V1LT3G
描述 Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon, Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,
厂商名称 LRC LRC LRC LRC LRC LRC
包装说明 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大击穿电压 7.2 V 15.8 V 15.8 V 5.9 V 5.9 V 7.2 V
最小击穿电压 6.1 V 14.2 V 14.2 V 5.3 V 5.3 V 6.1 V
配置 COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
最大非重复峰值反向功率耗散 300 W 300 W 300 W 300 W 300 W 300 W
元件数量 2 2 2 2 2 2
端子数量 3 3 3 3 3 3
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
参考标准 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2 AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压 5.25 V 12 V 12 V 3 V 3 V 5.25 V
表面贴装 YES YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL

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