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S-LESDA5V3LT1G: 产品描述Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon,; 产品类别分立半导体二极管; 文件大小348KB，共5页; 制造商LRC; 官网地址http://www.lrc.cn

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S-LESDA5V3LT1G概述

Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon,

S-LESDA5V3LT1G规格参数

参数名称	属性值
厂商名称	LRC
包装说明	R-PDSO-G3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大击穿电压	5.9 V
最小击穿电压	5.3 V
配置	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	R-PDSO-G3
最大非重复峰值反向功率耗散	300 W
元件数量	2
端子数量	3
最高工作温度	125 °C
最低工作温度	-40 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性	UNIDIRECTIONAL
参考标准	AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压	3 V
表面贴装	YES
技术	AVALANCHE
端子形式	GULL WING
端子位置	DUAL

S-LESDA5V3LT1G文档预览

LESHAN RADIO COMPANY, LTD.

Dual transil array for ESD protection

General Description

The LESDA5V3LT1G is a dual monolithic voltage

suppressor designed to protect components which

are connected to data and transmission lines against

ESD. It clamps the voltage just above the logic level

supply for positive transients, and to a diode drop

below ground for negative transients. It can also

work as bidirectionnal suppressor by connecting

only pin1 and 2.

LESDA5V3LT1G

S-LESDA5V3LT1G

LESDA6V1LT1G

S-LESDA6V1LT1G

LESDA14V2LT1G

S-LESDA14V2LT1G

LESDA25VLT1G

S-LESDA25VLT1G

Applications

Computers

Printers

Communication systems

It is particulary recommended for the RS232 I/O

port protection where the line interface withstands

only with 2kV ESD surges.

SOT– 23

Features

2 Unidirectional Transil functions

Low leakage current: I

max< 20

μA

at VBR

3 00W peak pulse power(8/20μs)

High ESD protection level: up to 25 kV

S- Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change

Requirements; AEC-Q101 Qualified and PPAP Capable.

Benefits

High ESD protection level

up to 25 kV. High integration.

Suitable for high density boards.

O rdering Information

Device

LESDA5V3LT1G,S-LESDA5V3LT1G

LESDA5V3LT3G,S-LESDA5V3LT3G

LESDA6V1LT1G,S-LESDA6V1LT1G

LESDA6V1LT3G,S-LESDA6V1LT3G

LESDA14V2LT1G,S-LESDA14V2LT1G

LESDA14V2LT3G,S-LESDA14V2LT3G

LESDA25VLT1G,S-LESDA25VLT1G

LESDA25VLT3G,S-LESDA25VLT3G

Marking

E53

E61

E14

E25

Shipping

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

3000/Tape&Reel

10000/Tape&Reel

Complies with the following standards

IEC61000-4-2

Level 4

MIL STD 883c - Method 3015-6 Class 3

(Human Body Model)

Absolute Ratings (T

amb

=25

°C )

Symbol

Parameter

Value

Units

stg

Peak Pulse Power (t

= 8/20μs)

Maximum lead temperature for soldering during 10s

Storage Temperature Range

Operating Temperature Range

Maximum junction temperature

Electrostatic discharge

MIL STD 883C -Method 3015-6

IEC61000-4-2 air discharge

IEC61000-4-2 contact discharge

300

260

-55 to +15

-40 to +125

150

°C

Rev.O 1/5

LESHAN RADIO COMPANY, LTD.

LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G

S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G

Electrical Parameter

Symbol

αT

Parameter

Stand-off voltage

Breakdown

voltage

Clamping

voltage

Leakage

current

Peak

pulse current

Voltage

temperature coefficient

Forward voltage drop

Capacitance

Dynamic

resistance

Electrical Characteristics

Part Numbers

Min.

LESDA5V3LT1G

LESDA6V1LT1G

LESDA14V2LT1G

LESDA25VLT1G

Max.

5.9

7.2

15.8

5.25

µA

Max.

1.25

1.2

200

Typ.

(1)

mΩ

280

350

650

1000

αT

Max.

(2)

-4

/°C

Typ. 0v bias

220

140

5.3

6.1

14.2

1.Square

pulse I

=15A,t

=2.5µs

2.△V

=aT*(T

amb

-25°C)*V

(25°C)

Typical Characteristics

Fig1.Peak power dissipation versus

Initial junction temperature

Fig2. Peak pulse power versus exponential

pulse duration(T

initial=25°C)

Rev.O 2/5

LESHAN RADIO COMPANY, LTD.

LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G

S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G

Fig3. Clamping voltage versus peak

pulse current(T

initial=25°C,

rectangular Waveform,t

=2.5

Fig4. Capacitance versus reverse

Applied voltage

Fig5.Relative variation of leakage current

Versus junction temperature

Application Note

Fig6. Peak forward voltage drop versus

peak forward current

Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage

Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient

to a low enough level such that damage to the protected

semiconductor is prevented.

Surface mount TVS arrays offer the best choice for minimal lead inductance. They serve as parallel

protection elements, connected between the signal line to ground. As the transient rises above the operating

voltage of the device, the TVS array becomes a low impedance path diverting the transient current to ground.

The ESDAxxL array is the ideal board evel protection of ESD sensitive semiconductor components.

The tiny SOT23 package allows design flexibility in the design of high density boards where the space

saving is at a premium. This enables to shorten the routing and contributes to hardening againt ESD.

Rev.O 3/5

LESHAN RADIO COMPANY, LTD.

LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G

S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G

Rev.O 4/5

LESHAN RADIO COMPANY, LTD.

LESDA5V3LT1G,LESDA6V1LT1G,LESDA14V2LT1G,LESDA25VLT1G

S-LESDA5V3LT1G,S-LESDA6V1LT1G,S-LESDA14V2LT1G,S-LESDA25VLT1G

SOT-23

NOTES:

B S

DIM

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M,1982

2. CONTROLLING DIMENSION: INCH.

INCHES

MIN

MAX

0.1102

0.1197

0.0472

0.0551

0.0350

0.0440

0.0150

0.0200

0.0701

0.0807

0.0005

0.0040

0.0034

0.0070

0.0140

0.0285

0.0350

0.0401

0.0830

0.1039

0.0177

0.0236

MILLIMETERS

MIN

MAX

2.80

3.04

1.20

1.40

0.89

1.11

0.37

0.50

1.78

2.04

0.013

0.100

0.085

0.177

0.35

0.69

0.89

1.02

2.10

2.64

0.45

0.60

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Rev.O 5/5

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S-LESDA5V3LT1G相似产品对比

	S-LESDA5V3LT1G	S-LESDA14V2LT3G	S-LESDA14V2LT1G	S-LESDA5V3LT3G	S-LESDA6V1LT1G	S-LESDA6V1LT3G
描述	Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Unidirectional, 2 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, 3V V(RWM), Unidirectional, 2 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,	Trans Voltage Suppressor Diode, 300W, 5.25V V(RWM), Unidirectional, 2 Element, Silicon,
厂商名称	LRC	LRC	LRC	LRC	LRC	LRC
包装说明	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大击穿电压	5.9 V	15.8 V	15.8 V	5.9 V	7.2 V	7.2 V
最小击穿电压	5.3 V	14.2 V	14.2 V	5.3 V	6.1 V	6.1 V
配置	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
最大非重复峰值反向功率耗散	300 W	300 W	300 W	300 W	300 W	300 W
元件数量	2	2	2	2	2	2
端子数量	3	3	3	3	3	3
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
参考标准	AEC-Q101; IEC-61000-4-2	AEC-Q101; IEC-61000-4-2	AEC-Q101; IEC-61000-4-2	AEC-Q101; IEC-61000-4-2	AEC-Q101; IEC-61000-4-2	AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压	3 V	12 V	12 V	3 V	5.25 V	5.25 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

S-LESDA5V3LT1G

S-LESDA5V3LT1G概述

S-LESDA5V3LT1G规格参数

S-LESDA5V3LT1G文档预览

S-LESDA5V3LT1G相似产品对比

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