MASW-005100-1194
HMIC™ SP5T Silicon PIN Diode Switch
V3
Features
♦
♦
♦
♦
♦
♦
Ultra Broad Bandwidth: 50MHz to 26GHz
0.9 Insertion Loss , 38dB Isolation at 20GHz
50nS Switching Speed
Reliable, Fully Monolithic, Glass Encapsulated
Construction
+33dBm Power Handling
RoHS Compliant
Description
The MASW-005100-1194 is a SP4T, series-shunt,
broad band, PIN diode, switch made with M/A-COM
Tech’s unique HMIC
TM
(Heterolithic Microwave
Integrated Circuit) process, US Patent 5,268,310.
This process allows for the incorporation of silicon
pedestals that form the series and shunt diodes or
vias by imbedding them in a low loss, low dispersion
glass. This hybrid combination of silicon and glass
gives HMIC switches exceptional low loss and
remarkable high isolation through low millimeter-
wave frequencies.
Applications
This high performance switch is suitable for use in
multi-band ECM, radar, and instrumentation control
circuits where high isolation to insertion loss ratios
are required. With a standard +5V/-5V, TTL
controlled PIN diode driver, 50nS switching speeds
are achieved.
Absolute Maximum Ratings
T
AMB
= +25°C ( Unless Otherwise Specified )
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power (± 20mA)
Bias Current ( Forward )
Applied Voltage ( Reverse )
Value
-65°C to +125°C
-65°C to +150°C
+33dBm
± 20mA
-25 Volts
Notes:
Exceeding these limits may cause permanent
damage.
Maximum operating conditions for the
combination of RF Power, D.C. Bias, and
temperature: +33dBm, @ 15mA/Diode @ +85°C
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-005100-1194
HMIC™ SP5T Silicon PIN Diode Switch
V3
Typical Driver Connections
CONTROL LEVEL ( DC CURRENT )
J2
-20 mA
+20 mA
+20 mA
+20 mA
+20 mA
J3
+20 mA
-20 mA
+20 mA
+20 mA
+20 mA
J4
+20 mA
+20 mA
-20 mA
+20 mA
+20 mA
J5
+20 mA
+20 mA
+20 mA
-20 mA
+20 mA
J6
J2-J1
CONDITION OF RF OUTPUT
J3-J1
Isolation
Low Loss
Isolation
Isolation
Isolation
J4-J1
Isolation
Isolation
Low Loss
Isolation
Isolation
J5-J1
Isolation
Isolation
Isolation
Low Loss
Isolation
J6-J1
Isolation
Isolation
Isolation
Isolation
Low Loss
+20 mA
Low Loss
+20 mA
+20 mA
+20 mA
-20 mA
Isolation
Isolation
Isolation
Isolation
Electrical Specifications
T
AMB
= 25°C, ± 20 mA bias current (on-wafer measurements)
PARAMETER
INSERTION LOSS
ISOLATION
INPUT RETURN LOSS
OUTPUT RETURN LOSS
SWITCHING SPEED
FREQUENCY
20GHz
20GHz
20GHz
20GHz
10GHz
1
28
MIN
TYP
0.9
38
22
23
50
MAX
1.4
UNITS
dB
dB
dB
dB
nS
Notes:
Typical switching speed is measured from 10% to 90% of detected RF voltage driven by a TTL compatible driver. Driver
output parallel RC network uses a capacitor between 390pF – 560pF and a resistor between 150Ω – 220Ω to achieve 50nS
rise and fall times.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-005100-1194
HMIC™ SP5T Silicon PIN Diode Switch
V3
Typical Microwave Performance
INSERTION LOSS
0.000
LOSS ( dB )
-0.200
-0.400
-0.600
-0.800
-1.000
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
ISOLATION
0
-10
ISOLATION ( dB )
-20
-30
-40
-50
-60
-70
-80
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
J2
3
J3
J4
J5
J6
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-005100-1194
HMIC™ SP5T Silicon PIN Diode Switch
V3
Typical Microwave Performance
OUTPUT RETURN LOSS
0.000
-5.000
LOSS ( dB )
-10.000
-15.000
-20.000
-25.000
-30.000
-35.000
-40.000
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
J2
J3
J4
J5
J6
INPUT RETURN LOSS
0.
-5.
-10.
-15.
LOSS
-20.
(dB)
-25.
-30.
-35.
-40.
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
FREQUENCY ( GHz )
J2
4
J3
J4
J5
J6
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-005100-1194
HMIC™ SP5T Silicon PIN Diode Switch
V3
Operation of the MASW-005100-1194 Switch
The simultaneous application of negative DC current to the low loss port and positive DC current to the
remaining isolated ports as shown in Figure 1 will operate the MASW-005100-1194 PIN diode switch. The
backside metalized area of the die is the RF and DC return ground plane. The DC return is achieved on
common Port J1. A current source should be used to supply the DC control currents. The voltages at
these points will not exceed ±1.5 volts and are typically 1.2 volts for supply currents up to ± 20 mA. For
the port in low loss state, the series diode must be forward biased and the shunt diode reverse biased.
For all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A
typical bias network design which should provide >30 dB RF to DC isolation is shown in Figure 1.
Best
insertion loss, P1dB, IP3, and switching speed are achieved by using a voltage pull-up resistor in the
DC return path, J1 (not shown). A minimum value of |-2V| is recommended at this return node and
can be obtained using a standard, 65V, TTL controlled, PIN diode driver.
2 – 18 GHz Bias Network Schematic
J1
39 pF
22 pF
DC
Bias
22 nH
39 pF
100
Ω
22 nH
HMIC Switch Die
J6
22 pF
J2
J5
J4
J3
Fig. 1
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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