Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
参数名称 | 属性值 |
厂商名称 | Microsemi |
零件包装代码 | TO-3 |
包装说明 | , |
针数 | 2 |
Reach Compliance Code | compliant |
配置 | Single |
最大漏极电流 (Abs) (ID) | 3.9 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 150 W |
表面贴装 | NO |
APT904RAN | APT904R2AN | APT904R4AN | APT1004R4AN | APT1004RAN | |
---|---|---|---|---|---|
描述 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | 3.5A, 900V, 4.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 3 PIN | 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 3 PIN | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
厂商名称 | Microsemi | Microsemi | Microsemi | Microsemi | Microsemi |
Reach Compliance Code | compliant | compliant | unknown | unknown | compliant |
配置 | Single | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | NO | NO | NO | NO | NO |
零件包装代码 | TO-3 | - | TO-3 | TO-3 | TO-3 |
针数 | 2 | - | 2 | 2 | 2 |
最大漏极电流 (Abs) (ID) | 3.9 A | 3.5 A | - | - | 3.9 A |
最高工作温度 | 150 °C | 150 °C | - | - | 150 °C |
最大功率耗散 (Abs) | 150 W | 150 W | - | - | 150 W |
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