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BYD13KT/R: 产品描述DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode; 产品类别分立半导体二极管; 文件大小44KB，共7页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com

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BYD13KT/R概述

DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode

BYD13KT/R规格参数

参数名称	属性值
厂商名称	NXP(恩智浦)
包装说明	O-LALF-W2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	O-LALF-W2
元件数量	1
端子数量	2
最高工作温度	175 °C
封装主体材料	GLASS
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
表面贴装	NO
技术	AVALANCHE
端子形式	WIRE
端子位置	AXIAL

BYD13KT/R文档预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D119

BYD13 series

Controlled avalanche rectifiers

Product speciﬁcation

Supersedes data of April 1992

1996 May 24

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

FEATURES

•

Glass passivated

•

High maximum operating

temperature

•

Low leakage current

•

Excellent stability

•

Guaranteed avalanche energy

absorption capability

•

Available in ammo-pack.

DESCRIPTION

MARKING

Cavity free cylindrical glass package

through Implotec™

(1)

technology.

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

(1) Implotec is a trademark of Philips.

handbook, 4 columns

BYD13 series

MAM123

Fig.1 Simplified outline (SOD81) and symbol.

TYPE NUMBER

BYD13D

BYD13G

BYD13J

BYD13K

BYD13M

13D PH

13G PH

13J PH

13K PH

13M PH

MARKING CODE

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

RRM

BYD13D

BYD13G

BYD13J

BYD13K

BYD13M

RWM

crest working reverse voltage

BYD13D

BYD13G

BYD13J

BYD13K

BYD13M

continuous reverse voltage

BYD13D

BYD13G

BYD13J

BYD13K

BYD13M

−

200

400

600

800

1000

−

200

400

600

800

1000

PARAMETER

repetitive peak reverse voltage

−

200

400

600

800

1000

CONDITIONS

MIN.

MAX.

UNIT

1996 May 24

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BYD13 series

SYMBOL

F(AV)

PARAMETER

average forward current

CONDITIONS

= 55

°C;

lead length = 10 mm;

averaged over any 20 ms period;

see Figs 2 and 4

amb

= 65

°C;

PCB mounting

(see Fig.9);

averaged over any 20 ms period;

see Figs 3 and 4

MIN.

−

MAX.

1.40 A

UNIT

−

0.75 A

FSM

non-repetitive peak forward current

t = 10 ms half sinewave;

= T

j max

prior to surge;

= V

RRMmax

L = 120 mH; T

= T

j max

prior to

surge; inductive load switched off

see Fig.5

−

RSM

stg

non-repetitive peak reverse

avalanche energy

storage temperature

junction temperature

−

−65

+175

°C

ELECTRICAL CHARACTERISTICS

= 25

°C;

unless otherwise speciﬁed.

SYMBOL

(BR)R

PARAMETER

forward voltage

reverse avalanche

breakdown voltage

BYD13D

BYD13G

BYD13J

BYD13K

BYD13M

reverse current

= V

RRMmax

; see Fig.7

= V

RRMmax

; T

= 165

°C;

see Fig.7

reverse recovery time when switched from I

= 0.5 A to I

= 1 A;

measured at I

= 0.25 A; see Fig.10

diode capacitance

= 0 V; f = 1 MHz; see Fig.8

CONDITIONS

= 1 A; T

= T

j max;

see Fig.6

= 1 A; see Fig.6

= 0.1 mA

225

450

650

900

1100

−

100

−

µA

µs

MIN.

−

TYP.

−

MAX.

0.93

1.05

UNIT

THERMAL CHARACTERISTICS

SYMBOL

th j-tp

th j-a

Note

1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper

≥40 µm,

see Fig.9.

For more information please refer to the

“General Part of associated Handbook”.

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

note 1

CONDITIONS

lead length = 10 mm

VALUE

120

UNIT

K/W

1996 May 24

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

GRAPHICAL DATA

MBG039

BYD13 series

handbook, halfpage

2.0

IF(AV)

(A)

handbook, halfpage

1.0

MBG055

IF(AV)

(A)

1.6

0.8

1.2

0.6

0.8

0.4

0.2

120

200

160

Ttp (

120

160

200

Tamb (

a = 1.57; V

= V

RRMmax

;

= 0.5.

Lead length 10 mm.

a = 1.57; V

= V

RRMmax

;

= 0.5.

Device mounted as shown in Fig.9.

Fig.2

Maximum permissible average forward

current as a function of tie-point temperature

(including losses due to reverse leakage).

Fig.3

Maximum permissible average forward

current as a function of ambient temperature

(including losses due to reverse leakage).

MGC741

handbook, halfpage

2.5

MGC736

(W)

2.0

handbook, halfpage

200

a = 3 2.5

1.57

1.42

(

150

1.5

100

1.0

0.5

0.4

0.8

1.2

F(AV)

a = I

F(RMS)

F(AV)

; V

= V

RRMmax

;

= 0.5.

1.6

(A)

400

800

VR, V

RRM

1200

(V)

Fig.4

Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function

of average forward current.

Solid line = V

Dotted line = V

RRM

;

= 0.5.

Fig.5

Maximum permissible junction temperature

as a function of reverse voltage.

1996 May 24

Philips Semiconductors

Product speciﬁcation

Controlled avalanche rectiﬁers

BYD13 series

MBG048

handbook, halfpage

(µA)

MGC739

(A)

VF (V)

120

160

200

Tj (

Solid line: T

= 25

°C.

Dotted line: T

= 175

°C.

= V

RRMmax

Fig.6

Forward current as a function of forward

voltage; maximum values.

Fig.7

Reverse current as a function of junction

temperature; maximum values.

handbook, halfpage

MGC740

handbook, halfpage

(pF)

VR (V)

MGA200

f = 1 MHz; T

= 25

°C.

Dimensions in mm.

Fig.8

Diode capacitance as a function of reverse

voltage; typical values.

Fig.9 Device mounted on a printed-circuit board.

1996 May 24

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BYD13KT/R相似产品对比

	BYD13KT/R	BYD13D	BYD13DT/R	BYD13J	BYD13JT/R	BYD13K	BYD13M	BYD13MT/R
描述	DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode	1.4A, SILICON, RECTIFIER DIODE	DIODE 1.4 A, SILICON, RECTIFIER DIODE, Rectifier Diode	1.4A, SILICON, RECTIFIER DIODE	DIODE 0.75 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
包装说明	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
针数	2	-	-	-	2	2	2	2
最大正向电压 (VF)	-	1.05 V	1.05 V	1.05 V	-	1.05 V	1.05 V	-
最大非重复峰值正向电流	-	20 A	20 A	20 A	-	20 A	20 A	-
最大输出电流	-	1.4 A	1.4 A	1.4 A	0.75 A	0.4 A	0.4 A	-
最大重复峰值反向电压	-	200 V	-	600 V	600 V	800 V	1000 V	-

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