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Datasheet> 器件分类 > 分立半导体> 二极管> BYD13JT/R
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BYD13JT/R

产品描述DIODE 0.75 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
产品类别分立半导体    二极管   
文件大小44KB，共7页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 选型对比 全文预览

BYD13JT/R概述

DIODE 0.75 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD13JT/R规格参数

参数名称属性值
厂商名称NXP(恩智浦)
包装说明O-LALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码O-LALF-W2
元件数量1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流0.75 A
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
最大重复峰值反向电压600 V
最大反向恢复时间3 µs
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL

BYD13JT/R文档预览

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BYD13 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
BYD13 series
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
TYPE NUMBER
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
13D PH
13G PH
13J PH
13K PH
13M PH
MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
V
RWM
crest working reverse voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
V
R
continuous reverse voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
SYMBOL
I
F(AV)
PARAMETER
average forward current
CONDITIONS
T
tp
= 55
°C;
lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°C;
PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
MIN.
−
MAX.
1.40 A
UNIT
−
0.75 A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
20
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
7
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
−
3
21
−
−
−
−
−
1
100
−
−
V
V
V
V
V
µA
µA
µs
pF
MIN.
−
−
TYP.
−
−
MAX.
0.93
1.05
UNIT
V
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
60
120
UNIT
K/W
K/W
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG039
BYD13 series
handbook, halfpage
2.0
IF(AV)
(A)
handbook, halfpage
1.0
MBG055
IF(AV)
(A)
1.6
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
0
40
80
120
200
160
Ttp (
o
C)
0
0
40
80
120
160
200
Tamb (
o
C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC741
handbook, halfpage
2.5
MGC736
P
(W)
2.0
handbook, halfpage
200
a = 3 2.5
2
1.57
1.42
Tj
(
o
C)
150
1.5
100
1.0
D
0.5
50
G
J
K
M
0
0
0.4
0.8
1.2
I
F(AV)
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
1.6
(A)
0
0
400
800
VR, V
RRM
1200
(V)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
MBG048
handbook, halfpage
6
10
3
handbook, halfpage
IR
(µA)
2
MGC739
IF
(A)
4
10
2
10
0
0
1
VF (V)
2
1
0
40
80
120
160
200
Tj (
o
C)
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MGC740
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
1
1
10
10
2
VR (V)
3
10
3
MGA200
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5
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BYD13JT/R相似产品对比

BYD13JT/R BYD13D BYD13DT/R BYD13J BYD13K BYD13KT/R BYD13M BYD13MT/R
描述 DIODE 0.75 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode 1.4A, SILICON, RECTIFIER DIODE DIODE 1.4 A, SILICON, RECTIFIER DIODE, Rectifier Diode 1.4A, SILICON, RECTIFIER DIODE DIODE 0.4 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode DIODE SILICON, SIGNAL DIODE, HERMETICALLY SEALED, GLASS PACKAGE-2, Signal Diode
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
包装说明 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
元件数量 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
封装主体材料 GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
针数 2 - - - 2 2 2 2
最大输出电流 0.75 A 1.4 A 1.4 A 1.4 A 0.4 A - 0.4 A -
最大重复峰值反向电压 600 V 200 V - 600 V 800 V - 1000 V -
最大正向电压 (VF) - 1.05 V 1.05 V 1.05 V 1.05 V - 1.05 V -
最大非重复峰值正向电流 - 20 A 20 A 20 A 20 A - 20 A -

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