UNISONIC TECHNOLOGIES CO., LTD
8050S
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC
8050S
is a low voltage high current small signal NPN
transistor, designed for Class B push-pull audio amplifier and
general purpose applications.
NPN SILICON TRANSISTOR
3
1
2
SOT-23
FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20V
*Complementary to UTC 8550S
1
TO-92
ORDERING INFORMATION
Normal
8050S-x-AE3-R
8050S-x-T92-B
8050S-x-T92-K
Ordering Number
Lead Free Plating
8050SL-x-AE3-R
8050SL-x-T92-B
8050SL-x-T92-K
Halogen-Free
8050SG-x-AE3-R
8050SG-x-T92-B
8050SG-x-T92-K
Package
SOT-23
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
C
B
E
C
B
Packing
Tape Reel
Tape Box
Bulk
MARKING
(For SOT-23 Package)
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R206-001,E
8050S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( Ta=25°C, unless otherwise specified )
RATINGS
UNIT
30
V
20
V
5
V
700
mA
SOT-23
350
mW
Collector Dissipation(Ta=25°C)
P
C
TO-92
1
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CEO(SAT)
V
BEO(SAT)
V
BEO(SAT)
f
T
Cob
TEST CONDITIONS
I
C
= 100μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100μA, I
C
=0
V
CB
= 30V,I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 1mA
V
CE
= 1V, I
C
= 150 mA
V
CE
= 1V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 1V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CB
= 10V, I
E
= 0, f = 1MHz
MIN
30
20
5
TYP
MAX UNIT
V
V
V
1
uA
100
nA
400
100
120
40
0.5
1.2
1.0
100
9.0
V
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
C
120-200
D
160-300
E
280-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-001,E
8050S
Current Gain-Bandwidth
Product, f(MHz)
Collector Current, Ic(mA)
Collector Current, Ic(mA)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Saturation Voltage (mV)
DC Current Gain, h
FE
www.unisonic.com.tw
Capacitance, Cob (pF)
NPN SILICON TRANSISTOR
3 of 4
QW-R206-001,E
8050S
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 4
QW-R206-001,E
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