Si4356DY
New Product
Vishay Siliconix
N-Channel 30-V MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.006 @ V
GS
= 10 V
0.0075 @ V
GS
= 4.5 V
I
D
(A)
17
14
D
TrenchFETr Power MOSFETS
D
Optimized for Low-Side Synchronous
Rectifier Operation
D
100 % R
G
Tested
APPLICATIONS
D
Buck Converter
D
Synchronous Rectifier
- Secondary Rectifier
D
SO-8
S
S
S
G
1
2
3
4
Top View
8
7
6
5
D
D
D
D
S
N-Channel MOSFET
G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"12
17
Steady State
Unit
V
12
9
"50
A
1.40
1.6
1.0
-55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
14
2.7
3.0
2.0
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)
a
Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71880
S-03662—Rev. B, 14-Apr-03
www.vishay.com
t
v
10 sec
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
34
67
15
Maximum
41
80
19
Unit
_C/W
1
Si4356DY
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"12
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 17 A
V
GS
= 4.5 V, I
D
= 14 A
V
DS
= 15 V, I
D
= 17 A
I
S
= 2.7 A, V
GS
= 0 V
40
0.0048
0.0060
60
0.68
1.1
0.006
0.0075
S
V
0.6
1.4
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.7 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 17 A
30
7.2
6.7
2
16
10
105
35
40
3.4
25
15
160
55
70
ns
W
45
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 3 V
50
50
60
Transfer Characteristics
I
D
- Drain Current (A)
40
I
D
- Drain Current (A)
40
30
2V
20
30
20
T
C
= 125_C
25_C
-55_C
10
10
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71880
S-03662—Rev. B, 14-Apr-03
Si4356DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.010
5000
Vishay Siliconix
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.008
V
GS
= 4.5 V
0.006
C - Capacitance (pF)
4000
C
iss
3000
0.004
V
GS
= 10 V
2000
0.002
1000
C
rss
C
oss
0.000
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
6
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 17 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 17 A
4
r
DS(on)
- On-Resistance (
W)
(Normalized)
16
24
32
40
5
1.4
1.2
3
1.0
2
1
0.8
0
0
8
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.025
On-Resistance vs. Gate-to-Source Voltage
T
J
= 150_C
10
r
DS(on)
- On-Resistance (
W
)
0.020
I
S
- Source Current (A)
0.015
0.010
I
D
= 17 A
0.005
T
J
= 25_C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71880
S-03662—Rev. B, 14-Apr-03
www.vishay.com
3
Si4356DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
I
D
= 250
mA
200
Single Pulse Power
0.2
V
GS(th)
Variance (V)
160
Power (W)
-0.0
120
-0.2
80
-0.4
40
-0.6
-0.8
-50
0
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature (_C)
Safe Operating Area
100
Limited by
r
DS(on)
10
I
D
- Drain Current (A)
10 ms
1
100 ms
1s
0.1
T
C
= 25_C
Single Pulse
10 s
dc
0.01
0.1
1
10
100
1 ms
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 67_C/W
t
1
t
2
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 71880
S-03662—Rev. B, 14-Apr-03
Si4356DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71880
S-03662—Rev. B, 14-Apr-03
www.vishay.com
5
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