6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET
| 6N90 | 6N90G-TA3-T | 6N90L-TF1-T | 6N90G-TF3-T | 6N90G-TF1-T | 6N90L-TA3-T | 6N90L-TF3-T | |
|---|---|---|---|---|---|---|---|
| 描述 | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET |
| 是否Rohs认证 | - | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| 包装说明 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | - | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | - | compli | compliant | compliant | compliant | compli | compliant |
| 雪崩能效等级（Eas） | - | 650 mJ | 650 mJ | 650 mJ | 650 mJ | 650 mJ | 650 mJ |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 900 V | 900 V | 900 V | 900 V | 900 V | 900 V |
| 最大漏极电流 (Abs) (ID) | - | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A |
| 最大漏极电流 (ID) | - | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A | 6.2 A |
| 最大漏源导通电阻 | - | 2.3 Ω | 2.3 Ω | 2.3 Ω | 2.3 Ω | 2.3 Ω | 2.3 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | - | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 167 W | 56 W | 56 W | 56 W | 167 W | 56 W |
| 最大脉冲漏极电流 (IDM) | - | 24 A | 24 A | 24 A | 24 A | 24 A | 24 A |
| 表面贴装 | - | NO | NO | NO | NO | NO | NO |
| 端子形式 | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 外壳连接 | - | - | ISOLATED | ISOLATED | ISOLATED | - | ISOLATED |
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