6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
零件包装代码 | TO-220AB |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | compliant |
雪崩能效等级(Eas) | 650 mJ |
外壳连接 | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 900 V |
最大漏极电流 (Abs) (ID) | 6.2 A |
最大漏极电流 (ID) | 6.2 A |
最大漏源导通电阻 | 2.3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 56 W |
最大脉冲漏极电流 (IDM) | 24 A |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
6N90L-TF1-T | 6N90G-TA3-T | 6N90G-TF3-T | 6N90 | 6N90G-TF1-T | 6N90L-TA3-T | 6N90L-TF3-T | |
---|---|---|---|---|---|---|---|
描述 | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET | 6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET |
是否Rohs认证 | 符合 | 符合 | 符合 | - | 符合 | 符合 | 符合 |
厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD |
零件包装代码 | TO-220AB | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 | 3 | 3 | - | 3 | 3 | 3 |
Reach Compliance Code | compliant | compli | compliant | - | compliant | compli | compliant |
雪崩能效等级(Eas) | 650 mJ | 650 mJ | 650 mJ | - | 650 mJ | 650 mJ | 650 mJ |
外壳连接 | ISOLATED | - | ISOLATED | - | ISOLATED | - | ISOLATED |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 900 V | 900 V | 900 V | - | 900 V | 900 V | 900 V |
最大漏极电流 (Abs) (ID) | 6.2 A | 6.2 A | 6.2 A | - | 6.2 A | 6.2 A | 6.2 A |
最大漏极电流 (ID) | 6.2 A | 6.2 A | 6.2 A | - | 6.2 A | 6.2 A | 6.2 A |
最大漏源导通电阻 | 2.3 Ω | 2.3 Ω | 2.3 Ω | - | 2.3 Ω | 2.3 Ω | 2.3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | - | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | - | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 56 W | 167 W | 56 W | - | 56 W | 167 W | 56 W |
最大脉冲漏极电流 (IDM) | 24 A | 24 A | 24 A | - | 24 A | 24 A | 24 A |
表面贴装 | NO | NO | NO | - | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved