UNISONIC TECHNOLOGIES CO., LTD
4N65
4 Amps, 650 Volts
N-CHANNEL POWER MOSFET
1
Power MOSFET
TO-220
DESCRIPTION
The UTC
4N65
is a high voltage MOSFET designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
1
1
TO-220F
TO-220F1
FEATURES
* R
DS(ON)
= 2.5Ω
@V
GS
= 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
1
1
TO-251
TO-252
SYMBOL
2.Drain
1
1
TO-263
TO-262
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N65L-TA3-T
4N65G-TA3-T
4N65L- TF1-T
4N65G-TF1-T
4N65L- TF3-T
4N65G-TF3-T
4N65L-TM3-T
4N65G-TM3-T
4N65L-TN3-R
4N65G-TN3-R
4N65L-T2Q-T
4N65G-T2Q-T
4N65L-TQ2-R
4N65G-TQ2-R
4N65L-TQ2-T
4N65G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-262
TO-263
TO-263
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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QW-R502-397.B
4N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
4.4
A
Continuous
I
D
4.0
A
Drain Current
Pulsed (Note 2)
I
DM
16
A
Single Pulsed (Note 3)
E
AS
260
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
106
W
TO-220F/TO-220F1
36
W
Power Dissipation
P
D
TO-251
50
W
TO-252
50
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
650
V
10
μA
100 nA
-100 nA
V/°С
4.0
2.5
520
70
8
670
90
11
V
Ω
pF
pF
pF
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 650 V, V
GS
= 0 V
Forward
V
GS
= 30 V, V
DS
= 0 V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
= 250
μA,
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10 V, I
D
= 2.2 A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
0.6
2.0
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QW-R502-397.B
4N65
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
13 35
V
DD
= 300V, I
D
= 4.0A, R
G
= 25Ω
Turn-On Rise Time
t
R
45 100
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
25 60
Turn-Off Fall Time
t
F
35 80
Total Gate Charge
Q
G
15 20
V
DS
= 480V,I
D
= 4.0A, V
GS
= 10 V
Gate-Source Charge
Q
GS
3.4
(Note 1, 2)
Gate-Drain Charge
Q
GD
7.1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4 A
1.4
Maximum Continuous Drain-Source Diode
I
S
4.4
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6
Forward Current
V
GS
= 0 V, I
S
= 4.4 A,
Reverse Recovery Time
t
RR
250
dI
F
/dt = 100 A/μs (Note 1)
1.5
Reverse Recovery Charge
Q
RR
Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNIT
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
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QW-R502-397.B
4N65
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-397.B
4N65
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-397.B
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