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HYM76V4M655HGLT6-S

产品描述Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168
产品类别存储    存储   
文件大小144KB,共14页
制造商SK Hynix(海力士)
官网地址http://www.hynix.com/eng/
下载文档 详细参数 选型对比 全文预览

HYM76V4M655HGLT6-S概述

Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168

HYM76V4M655HGLT6-S规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称SK Hynix(海力士)
零件包装代码DMA
包装说明DIMM, DIMM144,32
针数168
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式SINGLE BANK PAGE BURST
最长访问时间6 ns
其他特性AUTO/SELF REFRESH
最大时钟频率 (fCLK)100 MHz
I/O 类型COMMON
JESD-30 代码R-XDMA-N168
JESD-609代码e4
内存密度268435456 bit
内存集成电路类型SYNCHRONOUS DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量168
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX64
输出特性3-STATE
封装主体材料UNSPECIFIED
封装代码DIMM
封装等效代码DIMM144,32
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)NOT SPECIFIED
电源3.3 V
认证状态Not Qualified
刷新周期4096
座面最大高度25.4 mm
自我刷新YES
最大待机电流0.008 A
最大压摆率0.8 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
温度等级COMMERCIAL
端子面层Gold (Au)
端子形式NO LEAD
端子节距0.8 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

下载PDF文档
4M x64 bits
PC100 SDRAM SO DI
M
based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM76V4M655HG(L)T6 Series
D E S C R IP T IO N
The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four
4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. Two 0.33uF and one 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM76V4M655HG(L)T6 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 32Mbytes
memory. The Hyundai HYM76V4M655HG(L)T6 Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.00” (25.40mm) Height PCB with double sided com-
ponents
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
Programmable CAS Latency ; 2, 3 Clocks
SDRAM internal banks : four banks
Module bank : one physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
O R D E R IN G IN F O R M A T IO N
Part No.
HYM76V4M655HGT6-8
HYM76V4M655HGT6-P
HYM76V4M655HGT6-S
HYM76V4M655HGLT6-8
HYM76V4M655HGLT6-P
HYM76V4M655HGLT6-S
Clock
Frequency
125MHz
100MHz
100MHz
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
Normal
4 Banks
4K
Low Power
TSOP-II
Gold
125MHz
100MHz
100MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of
circuits described. No patent licenses are implied.
Rev. 0.3/Apr.01

HYM76V4M655HGLT6-S相似产品对比

HYM76V4M655HGLT6-S HYM76V4M655HGLT6-8 HYM76V4M655HGT6-P HYM76V4M655HGLT6-P HYM76V4M655HGT6-S
描述 Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168 Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168 Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168 Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168 Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-168
零件包装代码 DMA DMA DMA DMA DMA
包装说明 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32 DIMM, DIMM144,32
针数 168 168 168 168 168
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
最长访问时间 6 ns 6 ns 6 ns 6 ns 6 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 100 MHz 125 MHz 100 MHz 100 MHz 100 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
内存密度 268435456 bit 268435456 bit 268435456 bit 268435456 bit 268435456 bit
内存集成电路类型 SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
内存宽度 64 64 64 64 64
功能数量 1 1 1 1 1
端口数量 1 1 1 1 1
端子数量 168 168 168 168 168
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4MX64 4MX64 4MX64 4MX64 4MX64
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装代码 DIMM DIMM DIMM DIMM DIMM
封装等效代码 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32 DIMM144,32
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096
座面最大高度 25.4 mm 25.4 mm 25.4 mm 25.4 mm 25.4 mm
自我刷新 YES YES YES YES YES
最大待机电流 0.008 A 0.008 A 0.008 A 0.008 A 0.008 A
最大压摆率 0.8 mA 0.8 mA 0.8 mA 0.8 mA 0.8 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 NO NO NO NO NO
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
厂商名称 SK Hynix(海力士) SK Hynix(海力士) - SK Hynix(海力士) SK Hynix(海力士)

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