MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
FEATURES
Ultra Broad Bandwidth : 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
0.3 dB Insertion Loss
46 dB Isolation at 50 GHz
Low Current consumption
-5V for low loss state
+10mA
for Isolation state
M/A-COM Tech’s unique AlGaAs
hetero-junction anode technology
Silicon Nitride Passivation
Polymer Scratch protection
RoHS Compliant* and 260°C Reflow Compatible
Yellow areas indicate bond pads
J1
J2
DESCRIPTION
The MA4AGSW1 is an Aluminum-Gallium-Arsenide,
single pole, single throw (SPST), PIN diode switch.
The switch features enhanced AlGaAs anodes which
are formed using M/A-COM Tech’s patented hetero-
junction technology. This technology produces a
switch with less loss than conventional GaAs proc-
esses. As much as a 0.3 dB reduction in insertion
loss can be realized at 50GHz. These devices are
fabricated on an OMCVD epitaxial wafer using a
process designed for high device uniformity and
extremely low parasitics. The diodes themselves
exhibit low series resistance, low capacitance, and
fast switching speed. They are fully passivated with
silicon nitride and have an additional polymer layer
for scratch protection. The protective coating
prevents damage to the diode junction and anode
air-bridges during handling and assembly. Off chip
bias circuitry is required.
Absolute Maximum Ratings @ T
AMB
= +25°C
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Junction Temperature
Maximum Rating
-55°C to +125°C
-55°C to +150°C
+23dBm C.W.
25V
± 25mA
+150°C
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes makes this switch
ideal for fast switching, high frequency, multi-throw
switch designs. These AlGaAs PIN switches are use
in switching arrays for radar systems, radiometers,
test equipment and other multi-assembly compo-
nents.
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Electrical Specifications @ T
AMB
= 25°C
(On-wafer measurements)
PARAMETER
INSERTION LOSS @ -5V
FREQUENCY BAND
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
0.05 - 18GHz
18 - 50GHz
10GHZ
MIN
---
---
20
40
---
---
---
---
---
TYP
0.2
0.3
22
46
30
16
30
16
10
MAX
0.3
0.6
---
---
---
---
---
---
---
UNITS
dB
dB
dB
dB
dB
dB
dB
dB
nS
ISOLATION @ +10mA
INPUT RETURN LOSS @ -5V
OUTPUT RETURN LOSS @ -5V
SWITCHING SPEED
*
( 10 % - 90 % RF VOLTAGE )
*Note:
Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL
compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and
a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Typical RF Performance (Probed on
Wafer)
INSERTION LOSS @ -5 V
0
-0.1
IL ( dB )
-0.2
-0.3
-0.4
-0.5
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
ISOLATION @ +10 mA
0
-10
ISOL ( dB )
-20
-30
-40
-50
-60
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
J2
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Typical RF Performance (Probed on wafer)
INPUT RETURN LOSS @ -5 V
0
-10
IRL ( dB )
-20
-30
-40
-50
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
OUTPUT RETURN LOSS @ -5 V
0
-10
ORL ( dB )
-20
-30
-40
-50
0.00
10.00
20.00
30.00
40.00
50.00
FREQUENCY ( GHz )
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4AGSW1
SPST Reflective AlGaAs PIN Diode Switch
Rev. V5
Operation of the MA4AGSW1 Switch
The application of 0V or a negative DC voltage to either J1 or J2 provides insertion loss for the MA4AGSW1
SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the diode
bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The backside area
of the die is the RF and DC return ground plane. The bias network design should yield >30 dB RF to DC isolation.
Available for use in conjunction with M/A-COM Tech’s line of AlGaAs switches are two, fully integrated, broad-
band, monolithic, bias networks which may be used as an alternative to the suggested individual component bias
network shown below. Refer to datasheets for the
MA4BN1840-1
and
MA4BN1840-2
for additional information.
The lowest insertion loss, P1dB, IP
3
, and switching speed is achieved by applying a minimum value of | -2V | at
D.C. Bias node, which is achievable with a standard, ± 5V TTL Controlled PIN Diode Driver.
MA4AGSW1 Schematic with 2-18 GHz Bias Network
Note: The bias network can be connected to either J1 or J2
TYPICAL DRIVER CONNECTIONS
CONTROL LEVEL (DC CURRENT)
RF OUTPUT STATE
J1 or J2
-5V
+10mA
5
J1-J2
Low Loss
Isolation
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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