Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, POWER MODULE-7
| 参数名称 | 属性值 |
| 厂商名称 | POWEREX |
| 零件包装代码 | MODULE |
| 包装说明 | FLANGE MOUNT, R-MUFM-X5 |
| 针数 | 7 |
| Reach Compliance Code | unknown |
| 最大集电极电流 (IC) | 800 A |
| 集电极-发射极最大电压 | 3300 V |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 门极-发射极最大电压 | 20 V |
| JESD-30 代码 | R-MUFM-X5 |
| 元件数量 | 1 |
| 端子数量 | 5 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 6940 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | UNSPECIFIED |
| 端子位置 | UPPER |
| 晶体管元件材料 | SILICON |
| 标称断开时间 (toff) | 3500 ns |
| 标称接通时间 (ton) | 1600 ns |
| VCEsat-Max | 5.72 V |
| CM800HA-66H | CM1200HA-66H | CM800HA-50H | CM1200HB-50H | |
|---|---|---|---|---|
| 描述 | Insulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES, N-Channel, POWER MODULE-7 | Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, POWER MODULE-9 | Insulated Gate Bipolar Transistor, 800A I(C), 2500V V(BR)CES, N-Channel, POWER MODULE-7 | Insulated Gate Bipolar Transistor, 1200A I(C), 2500V V(BR)CES, N-Channel, POWER MODULE-9 |
| 厂商名称 | POWEREX | POWEREX | POWEREX | POWEREX |
| 零件包装代码 | MODULE | MODULE | MODULE | MODULE |
| 包装说明 | FLANGE MOUNT, R-MUFM-X5 | FLANGE MOUNT, R-MUFM-X9 | FLANGE MOUNT, R-MUFM-X5 | FLANGE MOUNT, R-MUFM-X9 |
| 针数 | 7 | 9 | 7 | 9 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 800 A | 1200 A | 800 A | 1200 A |
| 集电极-发射极最大电压 | 3300 V | 3300 V | 2500 V | 2500 V |
| 配置 | SINGLE WITH BUILT-IN DIODE | COMPLEX | SINGLE WITH BUILT-IN DIODE | COMPLEX |
| 门极-发射极最大电压 | 20 V | 20 V | 20 V | 20 V |
| JESD-30 代码 | R-MUFM-X5 | R-MUFM-X9 | R-MUFM-X5 | R-MUFM-X9 |
| 元件数量 | 1 | 3 | 1 | 3 |
| 端子数量 | 5 | 9 | 5 | 9 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | 6940 W | 10240 W | 6940 W | 15630 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 端子位置 | UPPER | UPPER | UPPER | UPPER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称断开时间 (toff) | 3500 ns | 3500 ns | 3500 ns | 3500 ns |
| 标称接通时间 (ton) | 1600 ns | 1600 ns | 1600 ns | 1600 ns |
| VCEsat-Max | 5.72 V | 5.72 V | 4.16 V | 3.64 V |
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