FW513
Continued from preceding page.
Parameter
[FRD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
Sine wave, 10ms
600
600
1
4
150
--55 to +150
V
V
A
A
°C
°C
Symbol
Conditions
Ratings
Unit
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[FRD]
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
VR
VF
IR
trr1
trr2
Rth(j-c)
IR=1mA
IF=1A
VR=600V
IF=1A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction -Case
600
1.1
40
16
6
1.3
10
50
V
V
μA
ns
ns
°C / W
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=10mA, VGS=0V
VDS=480V, VGS=0V
VGS=±24V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.2A
ID=0.2A, VGS=10V
VDS=30V, f=1MHz
VDS=30V, f=1MHz
VDS=30V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=300V, VGS=10V, ID=0.35A
VDS=300V, VGS=10V, ID=0.35A
VDS=300V, VGS=10V, ID=0.35A
IS=0.35A, VGS=0V
3
0.48
5.8
130
25
4.0
9.1
15
18
19
6.2
0.9
3.8
0.76
1.2
7.6
600
1
±10
5
V
mA
μA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Switching Time Test Circuit
[MOSFET]
10V
0V
VIN
VDD=200V
ID=0.2A
RL=1000Ω
D
VOUT
VIN
PW=10μs
D.C.≤1%
G
FW513
P.G
50Ω
S
No. A1870-2/5
FW513
2.0
1.8
1.6
ID -- VDS
10
V
[MOSFET]
8V
2.0
1.8
ID -- VGS
Ta= --2
5
°
C
VDS=10V
[MOSFET]
1
5V
25
°
C
7V
1.6
Drain Current, ID -- A
Drain Current, ID -- A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
75
°
C
6V
VGS=5V
0
2
4
6
8
10
12
14
16
18
20
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
IT16051
10
Drain-to-Source Voltage, VDS -- V
IT15875
RDS(on) -- VGS
[MOSFET]
Gate-to-Source Voltage, VGS -- V
20
18
RDS(on) -- Ta
[MOSFET]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
9
ID=0.2A
8
16
14
12
10
8
6
4
2
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
7
6
=
V GS
A
0.2
I
D=
,
10V
5
4
0
4
8
12
16
20
24
3
IT16052
Gate-to-Source Voltage, VGS -- V
|
y
fs
|
-- ID
[MOSFET]
Ambient Temperature, Ta --
°C
3
2
1.0
7
5
IT16053
IS -- VSD
[MOSFET]
Forward Transfer Admittance,
|
y
fs
|
-- S
2
1.0
VDS=10V
VGS=0V
Source Current, IS -- A
7
5
3
2
0.1
7
5
3
2
0.01
0.001
°
C
25
3
2
0.1
7
5
0.01
7
5
3
2
2
3
5 7 0.01
2
3
5 7 0.1
2
3
Drain Current, ID -- A
100
7
5 7 1.0
2
IT16077
0.001
0.2
0.4
Ta=
7
3
2
0.6
--25
°
C
0.8
25
°
C
C
5
°
--2
=
Ta
°
C
75
5
°
C
1.0
1.2
IT16054
SW Time -- ID
[MOSFET]
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[MOSFET]
f=1MHz
Switching Time, SW Time -- ns
5
Ciss
100
7
5
3
2
10
7
5
3
2
tf
3
2
td (off)
Coss
tr
10
7
5
0.1
2
3
5
7
2
3
td(on)
Crss
1.0
1.0
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
IT15893
Drain-to-Source Voltage, VDS -- V
IT15894
No. A1870-3/5
FW513
Note on usage : Since the FW513 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of November, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1870-5/5
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