74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
The 74AHC1G126 is a single non-inverting buffer/bus driver
with a 3-state output. The output enters a high impedance
state when a LOW-level is applied to the output enable (OE)
pin. The device is designed for operation with a power supply
range of 2.0V to 5.5V.
Pin Assignments
(Top View)
OE 1
A 2
GND 3
4
SOT25 / SOT353
Y
5 Vcc
NEW PRODUCT
Features
•
•
•
•
•
Supply Voltage Range from 2.0V to 5.5V
± 8 mA Output Drive at 5.0V
CMOS low power consumption
Schmitt Trigger Action at All Inputs Make the Circuit
Tolerant for Slower Input Rise and Fall Time
ESD Protection per JESD 22
o
o
o
•
•
•
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
Exceeds 1000-V Charged Device Model (C101C)
Applications
•
•
General Purpose Logic
Wide array of products such as:
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
Latch-Up Exceeds 100mA per JESD 78, Class II
SOT25 and SOT353: Assembled with “Green” Molding
Compound (no Br, Sb)
Lead Free Finish / RoHS Compliant (Note 1)
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html
.
Notes:
74AHC1G126
Document number: DS35177 Rev. 1 - 2
1 of 9
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Absolute Maximum Ratings
(Note 2)
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
J
T
STG
Notes:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current (V
O
< 0 or V
O
> V
CC
)
Continuous output current (V
O
= 0 to V
CC
)
Continuous current through V
CC
Continuous current through GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+0.5
-20
±20
±25
50
-50
-40 to 150
-65 to 150
Unit
KV
KV
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
NEW PRODUCT
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
Recommended Operating Conditions
(Note 3)
Symbol
V
CC
Operating Voltage
V
CC
= 2V
V
IH
High-level Input Voltage
V
CC
= 3V
V
CC
= 5.5V
V
CC
= 2V
V
IL
V
I
V
O
I
OH
Low-level input voltage
Input Voltage
Output Voltage
V
CC
= 2V
High-level output current
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
V
CC
= 2V
I
OL
Low-level output current
Input transition rise or fall
rate
Operating free-air
temperature
V
CC
= 5V ± 0.5V
V
CC
= 3V
Δt/ΔV
T
A
Notes:
Parameter
Min
2
1.5
2.1
3.85
Max
5.5
Unit
V
V
0.5
0.9
1.65
V
V
V
uA
mA
uA
mA
ns/V
ºC
V
CC
= 3V
V
CC
= 5.5V
0
0
5.5
V
CC
-50
-4
-8
50
4
8
100
20
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
-40
125
3. Unused inputs should be held at V
CC
or Ground.
74AHC1G126
Document number: DS35177 Rev. 1 - 2
3 of 9
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
2V
3V
4.5V
3V
4.5V
2V
V
OL
Low Level
Output
Voltage
I
OL
= 50μA
I
OL
= 4mA
I
OL
= 8mA
I
I
I
OZ
I
CC
C
I
θ
JA
Input Current V
I
= 5.5 V or GND
Z State
Leakage
Current
Supply
Current
Input
Capacitance
Thermal
Resistance
Junction-to-
Ambient
Thermal
Resistance
Junction-to-
Case
V
O
=0 to 5.5 V
V
I
= 5.5V or GND
I
O
=0
V
I
= V
CC
– or GND
SOT25
(Note 4)
SOT353
SOT25
(Note 4)
SOT353
155
430
58
o
Min
1.9
2.9
4.4
2.58
3.94
25ºC
Typ.
2
3
4.5
Max
-40ºC to 85ºC
Min
Max
1.9
2.9
4.4
2.48
3.8
-40ºC to 125ºC
Min
Max
1.9
2.9
4.4
2.40
3.70
Unit
V
OH
High Level
Output
Voltage
I
OH
= -50μA
I
OH
= -4mA
I
OH
= -8mA
V
NEW PRODUCT
0.1
0.1
0.1
0.36
0.36
± 0.1
0.25
1
2.0
195
10
0.1
0.1
0.1
0.44
0.44
±1
2.5
10
10
0.1
0.1
0.1
0.55
0.55
±2
10
40
10
o
3V
4.5V
3V
4.5V
0 to 5.5V
5.5V
5.5V
5.5V
V
μA
μA
μA
pF
C/W
θ
JC
Note:
C/W
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
74AHC1G126
Document number: DS35177 Rev. 1 - 2
4 of 9
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G126
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Switching Characteristics
V
CC
= 3.3V ± 0.3
(see Figure 1)
Parameter
t
pd
t
en
From
(Input)
A
OE
OE
TO
(OUTPUT)
Y
Y
Y
C
L
=15pF
C
L
=50pF
C
L
=15pF
C
L
=50pF
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
0.6
0.6
0.6
0.6
25ºC
Typ.
4.4
6.3
4.9
7.0
6.3
9.0
Max
8.0
11.5
8.0
11.5
9.7
13.2
-40ºC to 85ºC
Min
Max
0.6
0.6
0.6
0.6
0.6
0.6
9.5
13.0
9.5
13.0
11.5
15.0
-40ºC to 125ºC
Min
Max
0.6
0.6
0.6
0.6
0.6
0.6
10.0
14.5
10.0
14.5
12.5
16.5
Unit
ns
ns
ns
ns
ns
ns
NEW PRODUCT
t
dis
V
CC
= 5V ± 0.5V
(see Figure 1)
Parameter
t
pd
t
en
t
dis
From
(Input)
A
OE
OE
TO
(OUTPUT)
Y
Y
Y
C
L
=15pF
C
L
=50pF
C
L
=15pF
C
L
=50pF
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
0.6
0.6
0.6
0.6
25ºC
Typ.
3.4
4.7
3.6
5.4
4.3
6.1
Max
5.5
7.5
5.6
8.0
6.8
8.8
-40 ºC to 85 ºC
Min
Max
0.6
0.6
0.6
0.6
0.6
0.6
6.5
8.5
6.3
9.0
8.0
10.0
-40 ºC to 125 ºC
Min
Max
0.6
0.6
0.6
0.6
0.6
0.6
7.0
9.5
7.0
9.5
8.5
11.0
Unit
ns
ns
ns
ns
ns
ns
Operating Characteristics
T
A
= 25 ºC
Parameter
C
pd
Power dissipation capacitance
Test
Conditions
f = 1 MHz
No Load
V
CC
= 5 V
Typ.
12
Unit
pF
74AHC1G126
Document number: DS35177 Rev. 1 - 2
5 of 9
www.diodes.com
March 2011
© Diodes Incorporated
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