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GS8322Z36E-225MT

产品描述ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
产品类别存储    存储   
文件大小632KB,共37页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
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GS8322Z36E-225MT概述

ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165

GS8322Z36E-225MT规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称GSI Technology
零件包装代码BGA
包装说明15 X 17 MM, 1 MM PITCH, FPBGA-165
针数165
Reach Compliance Codeunknown
ECCN代码3A991.B.2.B
最长访问时间2.7 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY
最大时钟频率 (fCLK)225 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B165
长度17 mm
内存密度37748736 bit
内存集成电路类型ZBT SRAM
内存宽度36
功能数量1
端子数量165
字数1048576 words
字数代码1000000
工作模式SYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织1MX36
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
电源2.5/3.3 V
认证状态Not Qualified
座面最大高度1.5 mm
最大待机电流0.2 A
最小待机电流2.3 V
最大压摆率0.36 mA
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级MILITARY
端子形式BALL
端子节距1 mm
端子位置BOTTOM
宽度15 mm

GS8322Z36E-225MT相似产品对比

GS8322Z36E-225MT GS8322Z72C-225M GS8322Z72C-225MT GS8322Z36E-225M GS8322Z18E-225M GS8322Z18E-225MT GS8322Z18B-225M GS8322Z18B-225MT GS8322Z36B-225M GS8322Z36B-225MT
描述 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 15 X 17 MM, 1 MM PITCH, FPBGA-165 LBGA, BGA209,11X19,40 LBGA, BGA209,11X19,40 15 X 17 MM, 1 MM PITCH, FPBGA-165 15 X 17 MM, 1 MM PITCH, FPBGA-165 15 X 17 MM, 1 MM PITCH, FPBGA-165 BGA, BGA119,7X17,50 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
针数 165 209 209 165 165 165 119 119 119 119
Reach Compliance Code unknown compliant compliant unknown compliant unknown compliant unknown compliant unknown
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 2.7 ns 4.4 ns 4.4 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns 2.7 ns
其他特性 FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY
最大时钟频率 (fCLK) 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz 225 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B165 R-PBGA-B209 R-PBGA-B209 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
长度 17 mm 22 mm 22 mm 17 mm 17 mm 17 mm 22 mm 22 mm 22 mm 22 mm
内存密度 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 36 72 72 36 18 18 18 18 36 36
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 165 209 209 165 165 165 119 119 119 119
字数 1048576 words 524288 words 524288 words 1048576 words 2097152 words 2097152 words 2097152 words 2097152 words 1048576 words 1048576 words
字数代码 1000000 512000 512000 1000000 2000000 2000000 2000000 2000000 1000000 1000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
组织 1MX36 512KX72 512KX72 1MX36 2MX18 2MX18 2MX18 2MX18 1MX36 1MX36
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA BGA BGA BGA BGA
封装等效代码 BGA165,11X15,40 BGA209,11X19,40 BGA209,11X19,40 BGA165,11X15,40 BGA165,11X15,40 BGA165,11X15,40 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V 2.5/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.5 mm 1.7 mm 1.7 mm 1.5 mm 1.5 mm 1.5 mm 1.99 mm 1.99 mm 1.99 mm 1.99 mm
最大待机电流 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
最小待机电流 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
最大压摆率 0.36 mA 0.39 mA 0.39 mA 0.36 mA 0.28 mA 0.28 mA 0.28 mA 0.28 mA 0.36 mA 0.36 mA
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 15 mm 14 mm 14 mm 15 mm 15 mm 15 mm 14 mm 14 mm 14 mm 14 mm
厂商名称 GSI Technology - - GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology

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