ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | GSI Technology |
零件包装代码 | BGA |
包装说明 | 15 X 17 MM, 1 MM PITCH, FPBGA-165 |
针数 | 165 |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.B |
最长访问时间 | 2.7 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY |
最大时钟频率 (fCLK) | 225 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B165 |
长度 | 17 mm |
内存密度 | 37748736 bit |
内存集成电路类型 | ZBT SRAM |
内存宽度 | 36 |
功能数量 | 1 |
端子数量 | 165 |
字数 | 1048576 words |
字数代码 | 1000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 1MX36 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | LBGA |
封装等效代码 | BGA165,11X15,40 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE |
并行/串行 | PARALLEL |
电源 | 2.5/3.3 V |
认证状态 | Not Qualified |
座面最大高度 | 1.5 mm |
最大待机电流 | 0.2 A |
最小待机电流 | 2.3 V |
最大压摆率 | 0.36 mA |
最大供电电压 (Vsup) | 2.7 V |
最小供电电压 (Vsup) | 2.3 V |
标称供电电压 (Vsup) | 2.5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | MILITARY |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
宽度 | 15 mm |
GS8322Z36E-225MT | GS8322Z72C-225M | GS8322Z72C-225MT | GS8322Z36E-225M | GS8322Z18E-225M | GS8322Z18E-225MT | GS8322Z18B-225M | GS8322Z18B-225MT | GS8322Z36B-225M | GS8322Z36B-225MT | |
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描述 | ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 | ZBT SRAM, 512KX72, 4.4ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, FPBGA-209 | ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | ZBT SRAM, 2MX18, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | ZBT SRAM, 1MX36, 2.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | LBGA, BGA209,11X19,40 | LBGA, BGA209,11X19,40 | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | 15 X 17 MM, 1 MM PITCH, FPBGA-165 | BGA, BGA119,7X17,50 | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 |
针数 | 165 | 209 | 209 | 165 | 165 | 165 | 119 | 119 | 119 | 119 |
Reach Compliance Code | unknown | compliant | compliant | unknown | compliant | unknown | compliant | unknown | compliant | unknown |
ECCN代码 | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B |
最长访问时间 | 2.7 ns | 4.4 ns | 4.4 ns | 2.7 ns | 2.7 ns | 2.7 ns | 2.7 ns | 2.7 ns | 2.7 ns | 2.7 ns |
其他特性 | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY | FLOW-THROUGH OR PIPELINED ARCHITECTURE, LATE WRITE, IT ALSO OPERATES AT 3V SUPPLY |
最大时钟频率 (fCLK) | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz | 225 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B165 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B165 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 | R-PBGA-B119 |
长度 | 17 mm | 22 mm | 22 mm | 17 mm | 17 mm | 17 mm | 22 mm | 22 mm | 22 mm | 22 mm |
内存密度 | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit | 37748736 bit |
内存集成电路类型 | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM |
内存宽度 | 36 | 72 | 72 | 36 | 18 | 18 | 18 | 18 | 36 | 36 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 165 | 209 | 209 | 165 | 165 | 165 | 119 | 119 | 119 | 119 |
字数 | 1048576 words | 524288 words | 524288 words | 1048576 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 1048576 words | 1048576 words |
字数代码 | 1000000 | 512000 | 512000 | 1000000 | 2000000 | 2000000 | 2000000 | 2000000 | 1000000 | 1000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 1MX36 | 512KX72 | 512KX72 | 1MX36 | 2MX18 | 2MX18 | 2MX18 | 2MX18 | 1MX36 | 1MX36 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | LBGA | LBGA | LBGA | LBGA | LBGA | LBGA | BGA | BGA | BGA | BGA |
封装等效代码 | BGA165,11X15,40 | BGA209,11X19,40 | BGA209,11X19,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA165,11X15,40 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 | BGA119,7X17,50 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY, LOW PROFILE | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V | 2.5/3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.5 mm | 1.7 mm | 1.7 mm | 1.5 mm | 1.5 mm | 1.5 mm | 1.99 mm | 1.99 mm | 1.99 mm | 1.99 mm |
最大待机电流 | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
最小待机电流 | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
最大压摆率 | 0.36 mA | 0.39 mA | 0.39 mA | 0.36 mA | 0.28 mA | 0.28 mA | 0.28 mA | 0.28 mA | 0.36 mA | 0.36 mA |
最大供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
最小供电电压 (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 15 mm | 14 mm | 14 mm | 15 mm | 15 mm | 15 mm | 14 mm | 14 mm | 14 mm | 14 mm |
厂商名称 | GSI Technology | - | - | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology | GSI Technology |
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