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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGL0163ZSQ
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SGL0163ZSQ

产品描述Wide Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN
产品类别无线/射频/通信    射频和微波   
文件大小624KB，共9页
制造商Qorvo
官网地址https://www.qorvo.com
标准
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SGL0163ZSQ概述

Wide Band Low Power Amplifier, 100MHz Min, 1300MHz Max, 1 Func, BIPolar, SOT-363, 6 PIN

SGL0163ZSQ规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Qorvo
包装说明TSSOP6,.08
Reach Compliance Codecompliant
ECCN代码5A991.G
特性阻抗50 Ω
构造COMPONENT
增益14 dB
最大输入功率 (CW)10 dBm
安装特点SURFACE MOUNT
功能数量1
端子数量6
最大工作频率1300 MHz
最小工作频率100 MHz
最高工作温度85 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装等效代码TSSOP6,.08
电源3/4 V
射频/微波设备类型WIDE BAND LOW POWER
表面贴装YES
技术BIPOLAR

SGL0163ZSQ文档预览

SGL0163Z
100MHz to
1300MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0163Z
100MHz to 1300MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
NOT FOR NEW DESIGNS
Product Description
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier
featuring one-micron emitters with FT up to 50GHz. This device has an
internal temperature compensation circuit permitting operation directly
from supply voltages as low as 2.5V. The SGL0163Z has been character-
ized at V
D
=3V for low power and 4V for medium power applications. Only
two DC-blocking capacitors, a bias resistor, and an optional RF choke are
required for operation from 800MHz to 1300MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Temperature
Compensation
Circuit
Features
RF In
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
FO
R
Parameter
Small Signal Gain
Specification (V
S
=3V)
Min.
Typ.
Max.
14.0
15.7
15.5
14.1
4.4
5.2
5.6
17.0
NE
W
Specification (V
S
=4V)
Min.
Typ.
Max.
16.6
15.8
15.0
9.9
10.1
10.5
SiGe HBT
DE
SI
GN
V
S
Internally Matched to 50
800MHz to 1300MHz
High Input/Output Intercept
Low Noise Figure: 1.2dB Typ.
at 900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
RF Out / V
S
S
Applications
Unit
dB
dB
dB
dBm
dBm
dBm
Condition
800MHz
900MHz
1000MHz
800MHz
900MHz
1000MHz
Tone Spacing=1MHz
P
OUT
per tone=-13dBm
800MHz
900MHz
1000MHz
800MHz, Z
S
=50
900MHz, Z
S
=50
1000MHz, Z
S
=50
900MHz
900MHz
900MHz
NO
T
Input Third Order Intercept
Point
Output Power at 1dB Compres-
sion
3.2
5.0
Noise Figure
5.3
7.0
9.0
1.1
1.2
1.2
1.7
12.1
13.4
14.8
1.6
1.7
1.7
15.7
17.6
20.9
23
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
Input Return Loss
10.0
12.5
Output Return Loss
11.5
15.6
Reverse Isolation
20.9
Device Current
9.5
12.0
14.0
Thermal Resistance
255
Test Conditions: 800MHz to 1300 Application Circuit, T
LEAD
=25°C, Z
0
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS150831
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 9
SGL0163Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
D
)
Max Device Voltage (V
S
)
Max RF Input Power
Max Junction Temp (T
J
)
Operating Temp Range (T
LEAD
)
Max Storage Temp
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
Rating
45
5
+10
+150
-40 to +85
+150
1A
1
Unit
mA
V
dBm
°C
°C
°C
Class
MSL
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Caution! ESD sensitive device.
Device Voltage (V
D
) vs. Device Current (I
D
) Over Temperature
Load lines for V
S
= +5 Volts, R
B2
= 43
W
and 180
W
5.0
4.5
4.0
3.5
V
D
(Volts)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
S
= +5 V, R
B2
= 43
W
NE
W
6
11
V
S
= +5 V, R
B2
= 180
W
FO
R
DE
SI
GN
-40°C
+25°C
+85°C
16
I
D
(mA)
21
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l
NO
T
2 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
S
26
DS150831
SGL0163Z
Typical RF Performance at V
S
= 3 V and 4 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
Input IP3 vs Frequency
22.0
20.0
18.0
16.0
Input IP3 (dBm)
14.0
12.0
10.0
8.0
6.0
4.0
2.0
800
+3V
+4V
P1dB (dBm)
20.0
18.0
16.0
14.0
12.0
10.0
8.0
P1dB vs Frequency
+3V
+4V
4.0
2.0
DE
SI
GN
1300
0.0
800
850
900
950
1000
S
1050
1100
1150
1200
1250
1300
Freq. (MHz)
6.0
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
2.0
1.9
1.8
1.7
NF (dB)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
800
SGL-0163 Noise Figure
34.0
32.0
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
Output IP3 vs Frequency
NE
W
Output IP3 (dBm)
+3V
+4V
+3V
+4V
850
900
950
1000
1050
1100
1150
1200
1250
1300
14.0
800
850
900
950
1000
1050
Freq. (MHz)
1100
1150
1200
1250
1300
Freq. (MHz)
NO
T
DS150831
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
FO
R
3 of 9
SGL0163Z
Typical RF Performance at V
S
= 3 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
20
18
16
14
12
10
800
900
1000
1100
1200
1300
|
S
21
|
vs. Frequency
-1 0
-1 2
-1 4
-1 6
-1 8
|
S
11
|
vs. Frequency
S
21
(dB)
S
11
(dB)
800
900
S
1000
1100
1000
1100
1000
1100
-2 0
1200
1300
-1 5
-1 7
-1 9
-2 1
-2 3
-2 5
800
900
|
S
12
|
vs. Frequency
1000
1100
1200
1300
DE
SI
GN
-1 0
-1 4
-1 8
-2 2
-2 6
-3 0
F re q u e n c y (M H z)
F re q u e n c y (M H z)
|
S
22
|
vs. Frequency
S
12
(dB)
S
22
(dB)
800
900
1200
1300
Typical RF Performance at V
S
= 4 V -- 800-1300 MHz Evaluation Board -- T
LEAD
=+25
°
C
20
18
16
14
12
10
800
|
S
21
|
vs. Frequency
NE
W
1200
1300
F re q u e n c y (M H z)
F re q u e n c y (M H z)
-1 0
-1 2
-1 4
-1 6
-1 8
-2 0
800
900
|
S
11
|
vs. Frequency
FO
R
900
1000
1100
S
21
(dB)
S
11
(dB)
NO
T
1200
1300
F re q u e n c y (M H z)
-1 0
-1 4
-1 8
-2 2
-2 6
-3 0
F re q u e n c y (M H z)
-1 5
-1 7
-1 9
-2 1
-2 3
-2 5
|
S
12
|
vs. Frequency
|
S
22
|
vs. Frequency
S
12
(dB)
S
22
(dB)
800
900
1000
1100
1200
1300
800
900
1000
1100
1200
1300
F re q u e n c y (M H z)
F re q u e n c y (M H z)
4 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS150831
SGL0163Z
RF Performance - 400-500MHz Series L Application Circuit
Gain vs. Frequency @ T
LEAD
=+25C
400-500 MHz Series L Application Circuit
24
23
22
21
Gain (dB)
Gain (dB)
IRL, VS=3V
Gain vs. Frequency @ T
LEAD
=+25C
400-500 MHz Series L Application Circuit
0
-4
IRL, VS=4V
ORL, VS=3V
ORL, VS=4V
20
19
18
17
16
15
14
400
410
420
430
440
450
460
470
480
490
VS=3V, ID=11mA
VS=4V, ID=23mA
-8
DE
SI
GN
500
-20
400
410
420
430
440
450
-16
S
460
470
480
490
500
Frequency(MHz)
-12
Frequency(MHz)
V
S
=3V, I
D
=11mA (Typ.)
Freq
400 MHz
450 MHz
500 MHz
Gain
(dB)
22.0
21.3
20.6
P1dB
(dBm)
4.4
5.0
5.7
IIP3
(dBm)
1.3
3.2
4.1
OIP3
(dBm)
23.1
24.7
24.7
NF
(dB)
1.1
1.3
1.3
V
S
=4V, I
D
=24mA (Typ.)
Freq
400 MHz
450 MHz
500 MHz
Gain
(dB)
23.1
22.2
21.2
P1dB
(dBm)
10.9
11.4
12.0
IIP3
(dBm)
6.5
8.1
7.8
RF Performance - 100-800 MHz RC Feedback Application Circuit
Gain vs. Frequency @ T
LEAD
=+25C
100-800 MHz Feedback Application Circuit
30
28
26
24
Gain (dB)
22
20
18
16
NE
W
OIP3
(dBm)
29.6
30.3
28.9
NF
(dB)
2.0
2.1
2.1
Return Loss vs. Frequency @ T
LEAD
=+25C
100-800 MHz Feedback Application Circuit
0
IRL, VS=3V
IRL, VS=4V
ORL, VS=3V
ORL, VS=4V
FO
R
VS=3V, ID=11mA
VS=4V, ID=23mA
-5
Return Loss (dB)
-10
-15
-20
-25
NO
T
14
100
-30
150
200
250
300
350
400
450
500
550
600
650
700
750
800
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
Frequency(MHz)
Frequency(MHz)
V
S
=3V, I
D
=11mA (Typ.)
Freq
100 MHz
300 MHz
500 MHz
800 MHz
Gain
(dB)
23.9
21.4
18.7
15.2
Gain
(dB)
26.3
23.0
19.8
16.1
P1dB
IIP3
(dBm)
(dBm)
3.5
-6.8
3.4
-2.5
3.5
0.1
3.7
4.3
V
S
=4V, I
D
=23mA (Typ.)
P1dB
(dBm)
9.2
9.8
9.9
10.0
IIP3
(dBm)
-4.1
2.2
5.2
9.7
OIP3
(dBm)
17.1
18.9
18.8
19.5
OIP3
(dBm)
22.2
25.1
25.0
25.8
NF
(dB)
1.4
1.2
1.2
1.2
NF
(dB)
2.2
1.9
1.7
1.7
Freq
100 MHz
300 MHz
500 MHz
800 MHz
DS150831
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 9
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