CMPDM8120
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM8120 is
an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers low rDS(ON)
and low threshold voltage.
MARKING CODE: C8120
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t ≤ 5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Low rDS(ON)
• Low threshold voltage
• Logic level compatibility
• Small SOT-23 package
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ
JA
20
8.0
860
950
360
4.0
4.0
350
-65 to +150
357
MAX
50
500
1.0
0.9
150
142
200
240
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
mΩ
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VDS=VGS, ID=250μA
VSD
VGS=0, IS=360mA
rDS(ON)
VGS=4.5V, ID=0.95A
rDS(ON)
VGS=4.5V, ID=0.77A
rDS(ON)
VGS=2.5V, ID=0.67A
rDS(ON)
VGS=1.8V, ID=0.2A
gFS
VDS=10V, ID=810mA
Crss
VDS=16V, VGS=0, f=1.0MHz
Ciss
VDS=16V, VGS=0, f=1.0MHz
Coss
VDS=16V, VGS=0, f=1.0MHz
ton
VDD=10V, VGS=4.5V, ID=950mA,
RG=6Ω
toff
VDD=10V, VGS=4.5V, ID=950mA,
RG=6Ω
otherwise noted)
MIN
TYP
1.0
5.0
20
24
0.45
0.76
85
85
130
190
2.0
80
200
60
20
25
R1 (27-January 2010)
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