CBCX68_10,CBCX68_10 pdf中文资料,CBCX68_10引脚图,CBCX68

Datasheet> 器件分类 > CBCX68_10

文档预览

CBCX68_10: 产品描述SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS; 文件大小288KB，共3页; 制造商Central Semiconductor

下载文档选型对比全文预览

CBCX68_10概述

SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS

文档预览

下载PDF文档

全文
预览

CBCX68 SERIES NPN

CBCX69 SERIES PNP

SURFACE MOUNT

COMPLEMENTARY SILICON

SMALL SIGNAL TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBCX68 and

CBCX69 series types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount package,

designed for applications requiring high current

capability.

MARKING: FULL PART NUMBER

SOT-89 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCES

VCEO

VEBO

ICM

IBM

TJ, Tstg

UNITS

°C

°C/W

5.0

1.0

2.0

100

200

1.2

-65 to +150

104

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=25V

ICBO

VCB=25V, TA=150°C

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

VEB=5.0V

IC=10µA

IC=10mA

IE=1.0µA

IC=1.0A, IB=100mA

VCE=10V, IC=5.0mA

VCE=1.0V, IC=1.0A

VCE=10V, IC=5.0mA

VCE=1.0V, IC=500mA (CBCX68, CBCX69)

VCE=1.0V, IC=500mA (CBCX68-16, CBCX69-16)

VCE=1.0V, IC=500mA (CBCX68-25, CBCX69-25)

VCE=1.0V, IC=1.0A

VCE=5.0V, IC=10mA, f=20MHz

100

160

5.0

TYP

MAX

100

UNITS

µA

0.5

0.6

1.0

375

250

400

MHz

R10 (4-January 2010)

CBCX68_10相似产品对比

	CBCX68_10	CBCX69	CBCX68
描述	SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS
是否无铅	-	含铅	含铅
是否Rohs认证	-	不符合	不符合
厂商名称	-	Central Semiconductor	Central Semiconductor
包装说明	-	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
针数	-	3	3
Reach Compliance Code	-	_compli	_compli
ECCN代码	-	EAR99	EAR99
外壳连接	-	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	-	1 A	1 A
集电极-发射极最大电压	-	20 V	20 V
配置	-	SINGLE	SINGLE
最小直流电流增益 (hFE)	-	85	85
JESD-30 代码	-	R-PSSO-F3	R-PSSO-F3
JESD-609代码	-	e0	e0
元件数量	-	1	1
端子数量	-	3	3
最高工作温度	-	150 °C	150 °C
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	-	PNP	NPN
最大功率耗散 (Abs)	-	1.2 W	1.2 W
认证状态	-	Not Qualified	Not Qualified
表面贴装	-	YES	YES
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	FLAT	FLAT
端子位置	-	SINGLE	SINGLE
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	-	AMPLIFIER	AMPLIFIER
晶体管元件材料	-	SILICON	SILICON
标称过渡频率 (fT)	-	65 MHz	65 MHz

推荐资源

器件捷径: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多