8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
DESCRIPTION
The H11ADB series optocouplers have two channels for high density applications.
The inverse parallel channel orientation is ideal for applications which require data
to be both transmitted and received on each side of the isolation boundary. Each
channel consists of a GaAs LED optically coupled to a silicon NPN phototransistor.
8
1
H11ADB61
H11ADB62
FEATURES
• Inverse parallel channel orientation
• High isolation voltage 5300 VAC RMS-1 minute, 7500 VAC PEAK-1 minute
• High BV
CEO
minimum 70 volts
• Two isolated channels per package
• Underwriters Laboratory (UL) recognized file #E90700
ANODE 1
8 COLLECTOR
8
1
8
1
SCHEMATIC
APPLICATIONS
CATHODE 2
7 EMITTER
• AC line/Digital logic
• Digital logic/Digital logic
EMITTER 3
6 CATHODE
COLLECTOR 4
5 ANODE
ABSOLUTE MAXIMUM RATINGS
(No derating required up to 85°C)
Rating
EMITTER
(Each channel)
Forward Current - Continuous
Forward Current - Peak (PW = 1µs, 300pps)
Reverse Voltage
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
(Each channel)
Collector Current - Continuous
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature (wave solder)
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
© 2003 Fairchild Semiconductor Corporation
Symbol
Value
Unit
I
F
I
F
(pk)
V
R
P
D
60
3.0
5
100
1.33
50
70
7
150
2.0
-55 to +125
-55 to +100
260 for 10 sec
400
5.33
mA
A
V
mW
mW/°C
mA
V
V
mW
mW/°C
°C
°C
°C
mW
mW/°C
I
C
BV
CEO
BV
ECO
P
D
T
STG
T
OPR
T
SOL
P
D
Page 1 of 8
7/18/03
8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
H11ADB61
H11ADB62
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Current
Junction Capacitance
DETECTOR
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Capacitance
(I
C
= 1.0 mA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 0 V, f = 1 MHz)
BV
CEO
BV
ECO
I
CEO
C
CE
70
7
100
10
1
8
100
V
V
nA
pF
(I
F
= 20 mA)
(V
R
= 5 V)
(V
F
= 0 V, f = 1 MHz)
V
F
I
R
C
J
1.23
0.001
50
1.5
10
V
µA
pF
Test Conditions
Symbol
Min
Typ**
Max
Unit
TRANSFER CHARACTERISTICS
AC Characteristic
SWITCHING TIMES
Non-Saturated Turn-on Time
Non-Saturated Turn-off Time
(R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V)
(R
L
= 100
Ω
, I
C
= 2 mA, V
CC
= 10 V)
t
on
t
off
2.4
2.4
18
18
µs
µs
Test Conditions
Symbol
Min
Typ**
Max
Units
TRANSFER CHARACTERISTICS
DC Characteristic
Current Transfer Ratio, Collector-Emitter
H11ADB6
H11ADB61
H11ADB62
Saturation Voltage
(I
F
= 10 mA, I
C
= 2.5 mA)
V
CE(sat)
(I
F
= 5 mA, V
CE
= 5 V)
CTR
20
50
200
0.15
400
0.40
V
%
Test Conditions
Symbol
Min
Typ**
Max
Units
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
** All typicals at TA = 25°C
Test Conditions
(f = 60 Hz, t = 1 min.)
(V
I-O
= 500 VDC)
(f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
Min
5300
10
11
0.5
Typ**
Max
Units
Vac(rms)
Ω
pf
© 2003 Fairchild Semiconductor Corporation
Page 2 of 8
7/18/03
8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
H11ADB61
H11ADB62
Normalized CTR vs. Forward Current
1.4
V
CE
= 5.0V
T
A
= 25˚C
1.2
Normalized to
I
F
= 10 mA
1.4
1.6
Normalized CTR vs. Ambient Temperature
I
F
= 5 mA
1.0
NORMALIZED CTR
08
NORMALIZED CTR
1.2
I
F
= 10 mA
1.0
0.6
0.8
0.4
0.2
0.6
Normalized to
I
F
= 10 mA
T
A
= 25˚C
-50
-25
I
F
= 20 mA
0.0
0
5
10
15
20
0.4
-75
0
25
50
75
100
125
I
F
- FORWARD CURRENT (mA)
T
A
- AMBIENT TEMPERATURE (˚C)
Dark Current vs. Ambient Temperature
10
1
I
CEO
- COLLECTOR-EMITTER DARK CURRENT (µA)
V
CE
= 10 V
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (˚C)
© 2003 Fairchild Semiconductor Corporation
Page 3 of 8
7/18/03
8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
Switching Speed vs. Load Resistor
1000
I
F
= 10 mA
V
CC
= 10 V
T
A
= 25˚C
1.8
H11ADB61
H11ADB62
LED Forward Voltage vs. Forward Current
1.7
V
F
- FORWARD VOLTAGE (V)
100
1.6
SWITCHING SPEED - (µs)
1.5
T
off
T
f
10
1.4
T
A
= 55˚C
1.3
T
A
= 25˚C
1.2
T
on
1
T
r
1.1
T
A
= 100˚C
0.1
0.1
1
10
100
1.0
1
10
100
R-LOAD RESISTOR (kΩ)
I
F
- LED FORWARD CURRENT (mA)
Collector-Emitter Saturation Voltage vs Collector Current
V
CE (SAT)
- COLLECTOR-EMITTER SATURATION VOLTAGE (V)
100
T
A
= 25˚C
10
1
I
F
= 2.5 mA
0.1
0.01
I
F
= 10 mA
I
F
= 5 mA
I
F
= 20 mA
0.001
0.01
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
© 2003 Fairchild Semiconductor Corporation
Page 4 of 8
7/18/03
8-PIN BI-DIRECTIONAL
TRANSISTOR OPTOCOUPLER
H11ADB6
H11ADB61
H11ADB62
Package Dimensions (Through Hole)
PIN 1
ID.
4
3
2
1
Package Dimensions (Surface Mount)
0.390 (9.91)
0.370 (9.40)
4
3
2
1
PIN 1
ID.
0.270 (6.86)
0.250 (6.35)
5
6
7
8
0.270 (6.86)
0.250 (6.35)
0.390 (9.91)
0.370 (9.40)
5
6
7
8
SEATING PLANE
0.070 (1.78)
0.045 (1.14)
0.200 (5.08)
0.140 (3.55)
0.020 (0.51) MIN
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.300 (7.62)
TYP
0.016 (0.41)
0.008 (0.20)
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.016 (0.40)
0.008 (0.20)
15° MAX
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.045 [1.14]
0.315 (8.00)
MIN
0.405 (10.30)
MIN
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for
Surface Mount Leadform
4
3
2
1
PIN 1
ID.
0.070 (1.78)
0.270 (6.86)
0.250 (6.35)
0.060 (1.52)
5
6
7
8
0.390 (9.91)
0.370 (9.40)
0.100 (2.54)
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
SEATING PLANE
0.415 (10.54)
0.030 (0.76)
0.200 (5.08)
0.140 (3.55)
0.004 (0.10) MIN
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0.016 (0.40)
0.008 (0.20)
0° to 15°
0.400 (10.16)
TYP
NOTE
All dimensions are in inches (millimeters)
© 2003 Fairchild Semiconductor Corporation
Page 5 of 8
7/18/03
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