HVD138
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-958 (Z)
Rev.0
Aug. 2000
Features
•
Adopting the trench structure improves low capacitance. (C = 0.9 pF max)
•
Low forward resistance. (rf = 0.8
Ω
max)
•
Low operation current.
•
Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No.
HVD138
Laser Mark
8
Package Code
SFP
Outline
Cathode mark
Mark
1
8
2
1. Cathode
2. Anode
HVD138
Absolute Maximum Ratings
(Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
R
I
F
Pd
Tj
Tstg
Value
30
100
150
125
−55
to +125
Unit
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse current
Forward voltage
Capacitance
Forward resistance
Note:
Symbol
I
R
V
F
C
r
f
Min
Typ
Max
10
0.9
0.9
0.8
Unit
nA
V
pF
Ω
Test Condition
V
R
= 25 V
I
F
= 2 mA
V
R
= 1 V, f = 1 MHz
I
F
= 2 mA, f = 100 MHz
1. Please do not use the soldering iron due to avoid high stress to the SFP package.
2
HVD138
Main Characteristic
10
-2
10
-8
10
-4
Forward current I
F
(A)
Reverse current I
R
(A)
10
-9
10
-10
10
-11
Ta = 75°C
10
-6
10
-8
Ta = 75°C
Ta = 50°C
Ta = 50°C
10
-12
Ta = 25°C
-13
10
-10
Ta = 25°C
10
10
-12
10
-14
0
0.2
0.4
0.6
0.8
1.0
Forward voltage V
F
(V)
0
10
20
30
40
50
Reverse voltage V
R
(V)
Fig.2 Reverse current Vs. Reverse voltage
Fig.1 Forward current Vs. Forward voltage
f=1MHz
10
Forward resistance r
f
(
Ω
)
1
f=100MHz
10
Capacitance C (pF)
-11
10
-12
10
0
10
-13
0.1
1.0
Reverse voltage V
R
(V)
Fig.3 Capacitance Vs. Reverse voltage
10
10
-1
10
-5
10
-4
10
-3
10
(A)
-2
Forward current I
F
Fig.4 Forward resistance Vs. Forward current
3
HVD138
Forward resistance (parallel) r
P
(Ω)
10
10
10
6
5
4
3
f=100MHz
10
10
2
10
1
10
10
0
-1
0
0.2
0.4
0.6
0.8
Forward voltage V
F
(V)
Fig.5 Forward resistance (parallel) Vs. Forward voltage
4
HVD138
Package Dimensions
Unit: mm
1.4
±
0.10
0.13
±
0.05
0.5
−
0.55
0.3
±
0.05
0.6
±
0.05
1.0
±
0.10
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
SFP
0.0010 g
5
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