MIG50Q6CSB1X
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG50Q6CSB1X
(1200V/50A 6in1)
High Power Switching Applications
Motor Control Applications
•
•
•
•
Integrates inverter and control circuits (IGBT drive units, protection units for short-circuit current, over current,
under voltage and over temperature) in one package.
The electrodes are isolated from case.
V
CE (sat)
= 2.2 V (typ.)
UL recognized: File No. E87989
Equivalent Circuit
20
19
18
17
16
15
14
13
12 11 10
9
8
7
6
5
4
3
2
1
FO IN V
D
GND
FO IN V
D
GND
FO IN V
D
GND
GND IN FO V
D
GND IN FO V
D
GND IN FO V
D
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
W
1.
8.
15.
V
D
(U)
GND (V)
Open
2.
9.
16.
FO (U)
V
D
(W)
Open
3.
10.
17.
V
IN (U)
FO (W)
IN (X)
4.
11.
18.
U
GND (U)
IN (W)
IN (Y)
5.
12.
19.
V
D
(V)
GND (W)
IN (Z)
B
6.
13.
20.
FO (V)
V
D
(L)
N
7.
14.
IN (V)
FO (L)
P
GND (L)
2004-10-01
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MIG50Q6CSB1X
Package Dimensions
Unit: mm
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
Open
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
2004-10-01
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MIG50Q6CSB1X
Signal Terminal Layout
Unit: mm
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
Open
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
2004-10-01
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MIG50Q6CSB1X
Maximum Ratings
(unless otherwise specified, T
j
=
25°C)
Stage
Characteristic
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Storage temperature range
Module
Isolation voltage
Screw torque (terminal)
Screw torque (mounting)
AC 1 minute
M4
M5
Tc
=
25°C, DC
Tc
=
25°C, DC
Tc
=
25°C
⎯
V
D
-GND terminal
IN-GND terminal
FO-GND terminal
FO sink current
⎯
⎯
Condition
P-N power terminal
⎯
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
Tc
T
stg
V
ISO
⎯
⎯
Ratings
900
1200
50
50
580
150
20
20
20
14
−20
to 100
−40
to 125
2500
2
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
N·m
N·m
Electrical Characteristics
1. Inverter Stage
Characteristic
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
1200 V
V
D
=
15 V,
I
C
=
50 A,
V
IN
=
15 V
→
0 V
I
F
=
50 A, T
j
=
25°C
T
j
=
25°C
T
j
=
125°C
T
j
=
25°C
T
j
=
125°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
=
600 V, I
C
=
50 A,
V
D
=
15 V, V
IN
=
15 V
↔
0 V,
T
j
=
25°C, Inductive load
(Note 1)
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
2.2
⎯
2.4
2.0
0.3
0.3
1.5
0.4
Max
1
10
2.6
V
3.0
2.8
3.0
⎯
⎯
2.5
⎯
µs
V
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit and timing chart.
2004-10-01
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MIG50Q6CSB1X
2. Control Stage
(T
j
=
25°C)
Characteristic
Control circuit current
Input-on signal voltage
Input-off signal voltage
Protection
Fault output current
Normal
Over current
protection trip level
Short-circuit current
protection trip level
Over current cut-off time
Over temperature
protection
Control supply under
voltage protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
Inverter
Inverter
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
=
15 V
⎯
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V
Case temperature
Test Condition
Min
⎯
⎯
1.4
2.2
8
⎯
80
80
⎯
110
⎯
11.0
12.0
1
Typ.
13
39
1.6
2.5
10
⎯
⎯
⎯
5
118
98
12.0
12.5
2
Max
17
51
1.8
2.8
12
mA
0.1
⎯
⎯
⎯
125
⎯
12.5
13.0
3
ms
A
A
µs
°C
V
V
Unit
mA
V
3. Thermal Resistance
(Tc
=
25°C)
Characteristic
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R
th (j-c)
R
th (c-f)
Test Condition
Inverter IGBT stage
Inverter FRD stage
Compound is applied
Min
⎯
⎯
⎯
Typ.
⎯
⎯
0.017
Max
0.215
0.464
⎯
°C/W
Unit
°C/W
2004-10-01
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stm32/stm8
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