Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia.
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the references to Nexperia, as shown below.
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use
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Thank you for your cooperation and
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Team Nexperia
BUK7907-40ATC
N-channel TrenchPLUS standard level FET
Rev. 02 — 10 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS diodes for
clamping and temperature sensing. This product has been designed and qualified to the
appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Low conduction losses due to low
on-state resistance
Q101 compliant
1.3 Applications
Electrical Power Assisted Steering
(EPAS)
Variable Valve Timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference
Parameter
drain current
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 2;
see
Figure 3
V
GS
= 10 V; I
D
= 50 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 8
I
F
= 250 µA; T
j
> -55 °C;
T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Min
[1]
-
[2]
-
Typ
-
-
Max
40
75
Unit
V
A
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C;
Static characteristics
R
DSon
drain-source
on-state resistance
temperature sense
diode temperature
coefficient
temperature sense
diode forward
voltage
-
5.8
7
mΩ
S
F(TSD)
-1.4
-1.54
-1.68
mV/K
V
F(TSD)
648
658
668
mV
V
F(TSD)hys
temperature sense
diode forward
voltage hysteresis
[1]
[2]
Voltage is limited by clamping.
I
F
< 250 µA; T
j
= 25 °C;
I
F
> 125 µA
25
32
50
mV
Continuous current is limited by package.
NXP Semiconductors
BUK7907-40ATC
N-channel TrenchPLUS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
mb
Pinning information
Symbol
G
A
D
K
S
D
Description
gate
anode
drain
cathode
source
mounting base; connected to
drain
MBL306
Simplified outline
mb
Graphic symbol
d
a
g
s
k
12 3 4 5
SOT263B
(TO-220)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK7907-40ATC TO-220
plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead SOT263B
TO-220
BUK7907-40ATC_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2009
2 of 15
NXP Semiconductors
BUK7907-40ATC
N-channel TrenchPLUS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGS
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 2;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 2
I
DM
P
tot
I
DG(CL)
I
GS(CL)
peak drain current
total power dissipation
drain-gate clamping
current
gate-source clamping
current
T
mb
= 25 °C; t
p
≤
10 µs; pulsed; see
Figure 3
T
mb
= 25 °C; see
Figure 1
pulsed; t
p
= 5 ms;
δ
= 0.01
continuous
pulsed; t
p
= 5 ms;
δ
= 0.01
[2]
[3]
[3]
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
I
DG
= 250 µA
[1]
Min
-
-
-20
-
-
-
-
-
-
-
-
-100
Max
40
40
20
140
75
75
560
272
50
10
50
100
Unit
V
V
V
A
A
A
A
W
mA
mA
mA
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
V
isol(FET-TSD)
FET to temperature
sense diode isolation
voltage
T
stg
T
j
I
S
I
SM
Clamping
E
DS(CL)S
non-repetitive
drain-source clamping
energy
electrostatic discharge
voltage
[1]
[2]
[3]
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
I
D
= 75 A; V
DS
≤
40 V; V
GS
= 10 V; R
GS
= 10 kΩ;
unclamped; T
j(init)
= 25 °C
[2]
[3]
-55
-55
-
-
-
-
175
175
140
75
560
1.4
°C
°C
A
A
A
J
Source-drain diode
Electrostatic Discharge
V
esd
HBM; C = 100 pF; R = 1.5 kΩ
-
6
kV
Voltage is limited by clamping.
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
BUK7907-40ATC_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2009
3 of 15
NXP Semiconductors
BUK7907-40ATC
N-channel TrenchPLUS standard level FET
120
P
der
(%)
80
03na19
160
ID
(A)
120
03ni63
80
40
40
Capped at 75A due to package
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
200
Tmb (°C)
Fig 2.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Normalized continuous drain current as a
function of mounting base temperature
103
ID
(A)
Limit RDSon = VDS/ID
03ne75
tp = 10 µs
102
100 µs
Capped at 75 A due to package
DC
10
1 ms
10 ms
100 ms
1
1
10
VDS (V)
102
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7907-40ATC_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 February 2009
4 of 15
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