TO
-22
0A
B
BT139-600E
4Q Triac
Rev. 04 — 24 February 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in applications requiring high bidirectional transient and blocking
voltage capability and high thermal cycling performance. Typical applications include
motor control, industrial and domestic lighting, heating and static switching. This sensitive
gate "series E" triac is intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
1.2 Features and benefits
High blocking voltage capability
High noise immunity
Planar passivated for voltage
ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
1.3 Applications
General purpose motor control
General purpose switching
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
Quick reference data
Parameter
repetitive peak off-state
voltage
non-repetitive peak
on-state current
RMS on-state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; see
Figure 4;
see
Figure 5
full sine wave; T
mb
≤
99 °C;
see
Figure 1;
see
Figure 2;
see
Figure 3
Conditions
[1]
Min
-
-
Typ
-
-
Max Unit
600
155
V
A
I
T(RMS)
-
-
16
A
NXP Semiconductors
BT139-600E
4Q Triac
Quick reference data
…continued
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; see
Figure 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; see
Figure 7
Min
-
-
-
-
Typ
2.5
4
5
11
Max Unit
10
10
10
25
mA
mA
mA
mA
Table 1.
Symbol
I
GT
Static characteristics
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 15 A/ms.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
mb
T2
sym051
Simplified outline
Graphic symbol
T1
G
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BT139-600E
BT139-600E/DG
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 24 February 2011
2 of 14
NXP Semiconductors
BT139-600E
4Q Triac
4. Limiting values
Table 4.
Symbol
V
DRM
I
T(RMS)
I
TSM
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
mb
≤
99 °C; see
Figure 1;
see
Figure 2;
see
Figure 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4;
see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state current
t
p
= 10 ms; sine-wave pulse
I
T
= 20 A; I
G
= 200 mA; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 200 mA; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 200 mA; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 200 mA; dI
G
/dt = 0.2 A/µs;
T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
16
155
170
120
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ms.
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 24 February 2011
3 of 14
NXP Semiconductors
BT139-600E
4Q Triac
50
I
T(RMS)
(A)
40
001aab090
20
I
T(RMS)
(A)
15
001aab091
(1)
30
10
20
5
10
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
25
Fig 2.
RMS on-state current as a function of mounting
base temperature; maximum values
001aab093
95
T
mb(max)
(°C)
101
P
tot
(W)
20
α
=
180
120
90
15
60
30
107
10
α
113
5
α
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values.
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 24 February 2011
4 of 14
NXP Semiconductors
BT139-600E
4Q Triac
160
I
TSM
(A)
120
T
I
T
001aab102
I
TSM
t
T
j(initial)
= 25
°C
max
80
40
0
1
10
10
2
n
10
3
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aab092
10
3
I
TSM
(A)
10
2
(1)
I
T
I
TSM
(2)
T
t
T
j(initial)
= 25
°C
max
10
10
−2
10
−1
1
10
T (ms)
10
2
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139-600E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 04 — 24 February 2011
5 of 14
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