2MX8 EDO DRAM, 60ns, PDSO28
| 参数名称 | 属性值 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 包装说明 | TSOP2, |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH |
| JESD-30 代码 | R-PDSO-G28 |
| 长度 | 18.41 mm |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | EDO DRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 2097152 words |
| 字数代码 | 2000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2MX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TSOP2 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 10.16 mm |
| TMS426809AP-60DGC | TMS426809A-70DGC | ADC0852 | TMS426809AP-70DGC | TMS426809AP-50DGC | TMS426809A-50DGC | |
|---|---|---|---|---|---|---|
| 描述 | 2MX8 EDO DRAM, 60ns, PDSO28 | 2MX8 EDO DRAM, 70ns, PDSO28 | Multiplexed Comparator with 8-Bit Reference Divider | 2MX8 EDO DRAM, 70ns, PDSO28 | 2MX8 EDO DRAM, 50ns, PDSO28 | 2MX8 EDO DRAM, 50ns, PDSO28 |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | - | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| Reach Compliance Code | unknown | unknown | - | unknown | unknown | unknow |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | - | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns | 70 ns | - | 70 ns | 50 ns | 50 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | - | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-PDSO-G28 | R-PDSO-G28 | - | R-PDSO-G28 | R-PDSO-G28 | R-PDSO-G28 |
| 长度 | 18.41 mm | 18.41 mm | - | 18.41 mm | 18.41 mm | 18.41 mm |
| 内存密度 | 16777216 bit | 16777216 bit | - | 16777216 bit | 16777216 bit | 16777216 bi |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | - | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 8 | 8 | - | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | - | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | - | 28 | 28 | 28 |
| 字数 | 2097152 words | 2097152 words | - | 2097152 words | 2097152 words | 2097152 words |
| 字数代码 | 2000000 | 2000000 | - | 2000000 | 2000000 | 2000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | - | 70 °C | 70 °C | 70 °C |
| 组织 | 2MX8 | 2MX8 | - | 2MX8 | 2MX8 | 2MX8 |
| 输出特性 | 3-STATE | 3-STATE | - | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TSOP2 | TSOP2 | - | TSOP2 | TSOP2 | TSOP2 |
| 封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | - | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 认证状态 | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | - | 4096 | 4096 | 4096 |
| 座面最大高度 | 1.2 mm | 1.2 mm | - | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | - | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | - | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | - | YES | YES | YES |
| 技术 | CMOS | CMOS | - | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | GULL WING | GULL WING | - | GULL WING | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | - | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | - | DUAL | DUAL | DUAL |
| 宽度 | 10.16 mm | 10.16 mm | - | 10.16 mm | 10.16 mm | 10.16 mm |
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