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2SC3419_04

产品描述Medium-Power Amplifier Applications
文件大小116KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SC3419_04概述

Medium-Power Amplifier Applications

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2SC3419
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3419
Medium-Power Amplifier Applications.
Unit: mm
Low saturation voltage: V
CE (sat)
= 0.25 V (typ.)
(I
C
= 500 mA, I
B
= 50 mA)
High collector power dissipation: P
C
= 1.2 W (Ta = 25°C)
Complementary to 2SA1356
Maximum Ratings
(Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
40
40
5
800
80
1.2
5
150
−55
to 150
Unit
V
V
V
mA
mA
W
JEDEC
°C
°C
2-8H1A
JEITA
TOSHIBA
Electrical Characteristics
(Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
CEO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= 40 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 50 mA
V
CE
= 2 V, I
C
= 0.8 A
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 2 V, I
C
= 500 mA
V
CE
= 2 V, I
C
= 0.5 A
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Weight: 0.82 g (typ.)
Min
40
70
13
50
Typ.
60
0.25
0.90
100
10
Max
1.0
1.0
240
0.8
1.1
Unit
µA
µA
V
V
V
MHz
pF
Note: h
FE (1)
classification
O: 70 to 140, Y: 120 to 240
1
2004-07-07

2SC3419_04相似产品对比

2SC3419_04 2SC3419
描述 Medium-Power Amplifier Applications Medium-Power Amplifier Applications

 
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