电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SC4097-R

产品描述Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
产品类别分立半导体    晶体管   
文件大小85KB,共3页
制造商Micro Commercial Components (MCC)
下载文档 详细参数 选型对比 全文预览

2SC4097-R概述

Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

2SC4097-R规格参数

参数名称属性值
是否Rohs认证不符合
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
Reach Compliance Codecompli
ECCN代码EAR99
最大集电极电流 (IC)0.5 A
集电极-发射极最大电压32 V
配置SINGLE
最小直流电流增益 (hFE)82
JESD-30 代码R-PDSO-G3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
Base Number Matches1

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC4097-P
2SC4097-Q
2SC4097-R
Features
High I
cmax.
I
cmax
=0.5A
Low V
CE(SAT).
Optimal for low voltage operation.
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J,
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
32
40
5
500
200
-55 to +150
Unit
V
V
V
mA
mW
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
C
P
c max
must not be exceeded.
Electrical Characteristics @ 25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Unless Otherwise Specified
Min
40
32
5
Typ
Max
Units
V
V
G
F
E
B
Parameter
Collector -base breakdown voltage
(I
C
=100
µ
A, I
E
= 0)
Collector-emitter breakdown voltage
(I
C
=-1mA,
I
B
= 0)
Emitter-base breakdown voltage
(I
E
=100µA, I
c
= 0)
Collector cut-off current
(V
CB
=20V,I
E
=0)
Emitter cut-off current
(V
EB
=4V, I
c
= 0)
DC Current Gain
(V
CE
=3V,I
C
=10mA)
Collector-emitter saturation voltage
(I
C
=100mA, I
B
=10mA)
Collector Output Capacitance
(V
CB
=10V, I
E
=0, f=1.0MHz)
Transition frequency
(V
CE
=5V, Ic=20mA,f=100MHz)
B
E
H
J
V
K
I
CBO
1
µ
A
µ
A
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
I
EBO
1
NOTE
h
FE
82
390
V
CE(sat)
0.4
V
C
ob
6
pF
Suggested Solder
Pad Layout
0.70
f
T
250
MHz
0.90
h
FE
CLASSIFICATION
Rank
Ramge
Marking
P
82~180
CP
Q
120~270
CQ
R
180~390
CR
1.90
0.65
0.65
www.mccsemi.com
Revision: 1
1 of 3
2007/04/11

2SC4097-R相似产品对比

2SC4097-R 2SC4097-P 2SC4097-P-T 2SC4097-Q 2SC4097-Q-T 2SC4097-R-T
描述 Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Transistor Transistor
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code compli compli unknow compli unknow unknow
JESD-609代码 e0 e0 e0 e0 e0 e0
端子面层 TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 211  838  459  2799  2911  5  17  10  57  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved