电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

2SC4097-Q-T

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小85KB,共3页
制造商Micro Commercial Components (MCC)
下载文档 详细参数 选型对比 全文预览

2SC4097-Q-T概述

Transistor

2SC4097-Q-T规格参数

参数名称属性值
是否Rohs认证不符合
包装说明,
Reach Compliance Codeunknow
JESD-609代码e0
湿度敏感等级1
端子面层Tin/Lead (Sn/Pb)
Base Number Matches1

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC4097-P
2SC4097-Q
2SC4097-R
Features
High I
cmax.
I
cmax
=0.5A
Low V
CE(SAT).
Optimal for low voltage operation.
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J,
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
32
40
5
500
200
-55 to +150
Unit
V
V
V
mA
mW
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
C
P
c max
must not be exceeded.
Electrical Characteristics @ 25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Unless Otherwise Specified
Min
40
32
5
Typ
Max
Units
V
V
G
F
E
B
Parameter
Collector -base breakdown voltage
(I
C
=100
µ
A, I
E
= 0)
Collector-emitter breakdown voltage
(I
C
=-1mA,
I
B
= 0)
Emitter-base breakdown voltage
(I
E
=100µA, I
c
= 0)
Collector cut-off current
(V
CB
=20V,I
E
=0)
Emitter cut-off current
(V
EB
=4V, I
c
= 0)
DC Current Gain
(V
CE
=3V,I
C
=10mA)
Collector-emitter saturation voltage
(I
C
=100mA, I
B
=10mA)
Collector Output Capacitance
(V
CB
=10V, I
E
=0, f=1.0MHz)
Transition frequency
(V
CE
=5V, Ic=20mA,f=100MHz)
B
E
H
J
V
K
I
CBO
1
µ
A
µ
A
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.079
.087
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.012
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.00
2.20
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.30
.40
I
EBO
1
NOTE
h
FE
82
390
V
CE(sat)
0.4
V
C
ob
6
pF
Suggested Solder
Pad Layout
0.70
f
T
250
MHz
0.90
h
FE
CLASSIFICATION
Rank
Ramge
Marking
P
82~180
CP
Q
120~270
CQ
R
180~390
CR
1.90
0.65
0.65
www.mccsemi.com
Revision: 1
1 of 3
2007/04/11

2SC4097-Q-T相似产品对比

2SC4097-Q-T 2SC4097-P 2SC4097-P-T 2SC4097-Q 2SC4097-R 2SC4097-R-T
描述 Transistor Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Transistor Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Transistor
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknow compli unknow compli compli unknow
JESD-609代码 e0 e0 e0 e0 e0 e0
端子面层 Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 489  1426  909  740  2915  10  29  19  15  59 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved