2SC2411K / 2SC4097 / 2SC1741S
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K / 2SC4097 / 2SC1741S
!Features
1) High I
CMax
.
I
CMax
.
=
0.5mA
2) Low V
CE(sat)
.
Optimal for low voltage operation.
3) Complements the
2SA1036K / 2SA1577 / 2SA854S.
!External
dimensions
(Units : mm)
2SC2411K
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+0.2
−0.1
0.8±0.1
2SC4097
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.6
+0.2
−0.1
2.8±0.2
1.25±0.1
2.1±0.1
0
∼
0.1
0
∼
0.1
(3)
0.3
∼
0.6
All terminals have same dimensions
0.4
+0.1
−0.05
+0.1
0.15
−0.06
0.3
+0.1
−0
All terminals have same dimensions
0.15±0.05
!Structure
Epitaxial planar type
NPN silicon transistor
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : C*
Abbreviated symbol : C*
2SC1741S
4
±
0.2
2
±
0.2
3
±
0.2
(15Min.)
0.45
+
0.15
−
0.05
3Min.
5
2.5
+
0.4
−
0.1
0.5
0.45
+
0.15
−
0.05
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
*
Denotes h
FE
!Absolute
maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* P
C
must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
−55 ∼ +150
Unit
V
V
V
A
W
°C
°C
*
0.1
∼
0.4
(3)
2SC2411K / 2SC4097 / 2SC1741S
Transistors
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current 2SC2411K, 2SC4097
transfer ratio 2SC1741S
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
−
−
82
120
−
−
−
Typ.
−
−
−
−
−
−
−
−
250
6.0
Max.
−
−
−
1
1
390
560
0.4
−
−
Unit
V
V
V
µA
µA
−
−
V
MHz
pF
I
C
=
100µA
I
C
=
1mA
I
E
=
100µA
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
500mA/50mA
V
CE
=
5V, I
E
=
−20mA,
f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
Conditions
!Packaging
Specifications and h
FE
Package
Code
Type
2SC2411K
2SC4097
2SC1741S
h
FE
PQR
PQR
QRS
−
−
−
Basic ordering unit (pieces)
T146
3000
Taping
T106
3000
−
TP
5000
−
−
h
FE
values are classified as follows:
Item
h
FE
P
82
∼
180
Q
120
∼
270
R
180
∼
390
S
270
∼
560
!Electrical
characteristic curves
1000
500
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
6V
100
Ta=25
°C
mA
0.50
A
0.45m
A
0.40m
500
Ta=25
°C
2mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7 0.8
0.9
1.0
1.1
Ta
=
100
°C
80
°C
25
°C
−25°C
−55°C
0.35mA
400
0.30mA
0.25mA
300
50
0.20mA
0.15mA
0.10mA
200
0.6mA
0.4mA
100
0.05mA
0
0
1
2
3
I
B
=0A
4
5
0.2mA
0
0
I
B
=0A
1
2
3
4
5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1
Grounded emitter propagation
characteristics
Fig.2
Grounded emitter output
characteristics(Ι)
Fig.3
Grounded emitter output
characteristics(ΙΙ)
2SC2411K / 2SC4097 / 2SC1741S
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1
DC CURRENT GAIN : h
FE
0.5
500
0.2
0.1
0.05
Ta=100
°C
75
°C
50
°
C
100
25
°
C
0
°
C
C
50
25
°
−
°
C
−
50
200
20
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25
°C
l
C
/l
B
=10
1000
V
CE
=3V
500
Ta=25
°C
V
CE
=5V
200
100
50
0.02
0.5
1
2
5
10
20
50 100 200
500 1000
10
0.1 0.2
0.5 1
2
5 10 20
50 100 200 5001000
−0.5
−1
−2
−5
−10
−20
−50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 DC current gain vs. collector current
Fig. 6 Gain bandwidth product vs.
emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE
: Cib
(pF)
50
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
Cib
20
10
Co
b
5
2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE
: V
EB
(V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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