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2SA1244_10

产品描述High Current Switching Applications
文件大小162KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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2SA1244_10概述

High Current Switching Applications

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2SA1244
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
Unit: mm
Low collector saturation voltage: V
CE (sat)
=
−0.4
V (max) (I
C
=
−3
A)
High speed switching time: t
stg
= 1.0
μs
(typ.)
Complementary to 2SC3074
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−60
−50
−5
−5
−1
1.0
20
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2010-02-05

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