2SC4618
NPN TRANSISTOR
P b
Lead(Pb)-Free
1
3
2
FEATURES:
Power dissipation
P
CM
Collector current
I
CM
: 0.05 A
SOT-523(SC-75)
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
I
C
=50
μ
A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50
μ
A, I
C
=0
V
CB
=24V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
C
=1mA, f=100MHZ
V
CB
=6V, I
E
=0, f=1MHz
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
150
2.2
56
MIN
40
25
5
0.5
0.5
270
0.3
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
Marking
h
FE
N
56-120
AN
P
82-180
AP
Q
120-270
AQ
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2SC4618
Static Characteristic
2.25
1000
h
FE
——
I
C
COMMON EMITTER T
a
=25
℃
2.00
18.0uA
16.2uA
14.4uA
COLLECTOR CURRENT I
C
(mA)
1.75
1.50
1.25
1.00
0.75
0.50
DC CURRENT GAIN h
FE
12.6uA
10.8uA
9.0uA
7.2uA
5.4uA
3.6uA
T
a
=100
℃
100
T
a
=25
℃
0.25
I
B
=1.8uA
0.00
0
1
2
3
4
5
6
7
8
10
0.3
1
COMMON EMITTER
V
CE
= 6V
10
50
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
BEsat
β=10
——
I
C
1000
V
CEsat
β=10
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
T
a
=25
℃
600
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
400
0.1
1
10
50
10
0.1
1
10
50
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
50
——
V
BE
1000
f
T
——
I
C
10
TRANSITION FREQUENCY f
T
(MHz)
COMMON EMITTER
V
CE
=6V
COLLECTOR CURRENT I
C
(mA)
℃
T =2
5
℃
a
T=
a
10
0
100
1
COMMON EMITTER
V
CE
= 6V
T
a
=25
℃
10
0.11
0.1
300
600
900
1200
1
10
14
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
200
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
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