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2SC1740S-Q-C: 产品描述Small Signal Bipolar Transistor; 产品类别分立半导体晶体管; 文件大小295KB，共2页; 制造商SECOS; 官网地址http://www.secosgmbh.com/

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2SC1740S-Q-C概述

Small Signal Bipolar Transistor

2SC1740S-Q-C规格参数

参数名称	属性值
包装说明	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli
最大集电极电流 (IC)	0.15 A
集电极-发射极最大电压	50 V
配置	SINGLE
最小直流电流增益 (hFE)	120
JEDEC-95代码	TO-92
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	NPN
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

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2SC1740S

Elektronische Bauelemente

0.15A , 60V

NPN Plastic-Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low C

TO-92S

CLASSIFICATION OF h

Product-Rank

2SC1740S-Q

Range

120~270

2SC1740S-R

180~390

2SC1740S-S

270~560

REF.

Millimeter

Min.

Max.

3.90

4.10

3.05

3.25

1.42

1.62

15.1

15.5

2.97

3.27

0.66

0.86

2.44

2.64

1.27 REF.

0.36

0.48

0.36

0.51

45°

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

CBO

CEO

EBO

, T

STG

Rating

150

300

150, -55~150

Unit

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut–Off Current

Emitter Cut–Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Collector Output Capacitance

Transition Frequency

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

Min.

120

100

Typ.

Max.

0.1

560

0.4

3.5

Unit

µA

MHz

Test Condition

=50µA, I

=1mA, I

=50µA, I

=60V, I

=7V, I

=6V, I

=1mA

=50mA, I

=5mA

=12V, I

=0, f=1MHz

=12V, I

= -2mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

26-Mar-2012 Rev. A

Page 1 of 2

2SC1740S-Q-C相似产品对比

	2SC1740S-Q-C	2SC1740S-R-C	2SC1740S-S-C	2SC1740S-C
描述	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	compli	compli	compli	compli
最大集电极电流 (IC)	0.15 A	0.15 A	0.15 A	0.15 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	120	180	270	120
JEDEC-95代码	TO-92	TO-92	TO-92	TO-92
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	NPN	NPN	NPN	NPN
表面贴装	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1	-

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器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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