Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2690 2SC2690A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SA1220/1220A
APPLICATIONS
・For
use in audio and radio frequency
power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
固电
V
CEO
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Collector-base voltage
导½
半
PARAMETER
2SC2690
2SC2690A
2SC2690
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
120
160
120
160
5
1.2
2.5
0.3
UNIT
V
2SC2690A
V
V
V
A
A
A
V
EBO
I
C
I
CM
I
B
T
a
=25℃
P
D
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.2
W
20
150
-55½+150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=1A; I
B
=0.2A
I
C
=1A ;I
B
=0.2A
V
CB
=120V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=5mA ; V
CE
=5V
I
C
=0.3A ; V
CE
=5V
I
E
=0 ; V
CB
=10V f=1MHz
I
C
=0.2A ; V
CE
=5V
2SC2690 2SC2690A
MIN
TYP.
MAX
0.7
1.3
1
1
UNIT
V
V
μA
μA
35
60
19
155
320
pF
MHz
h
FE-2
Classifications
R
60-120
固电
Q
导½
半
P
160-320
ANG
CH
IN
100-200
MIC
E SE
OR
CT
NDU
O
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2690 2SC2690A
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2690 2SC2690A
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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