2SB1132
PNP Plastic-Encapsulate Transistors
* “G” Lead(Pb)-Free
SOT-89
1
1. BASE
2. COLLECTOR
3. EMITTER
2
3
C
ABSOLUTE MAXIMUM RATINGS (Ta=25
%
)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Power Dissipation
Junction Temperature, Storage Temperature
* Single pulse Pw = 100ms
Value
-40
-32
-5.0
-1.0
-2.0
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
PC
T
j
, Tstg
%
C
DEVICE MARKING
2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0)
Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0)
Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0)
Collector Cutoff Current (VCB= -20Vdc, IE=0)
Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Min
-40
-32
-5.0
-
-
Max
-
-
-
-0.5
-0.5
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
2SB1132
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC= -100 mAdc, VCE= -3 Vdc)
Collector-Emitter Saturation Voltage
(IC= -500 mAdc, I B = -50mAdc)
Transition Frequency
(IC= -50mAdc, VCE=-5 Vdc, f=30MHz)
Collector Output Capacitance
(IE= 0, VCB=-10 Vdc, f=1MHz)
hFE
VCE(sat)
fT
Cob
82
-
-
-
-
-
150
20
390
-0.5
-
Vdc
-
30
MHz
PF
CLASSIFICATION OF hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
WEITRON
http://www.weitron.com.tw