Datasheet> 器件分类 > 分立半导体> 晶体管> 2SB1132P-G

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2SB1132P-G: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小323KB，共5页; 制造商Weitron Technology; 官网地址http://weitron.com.tw/

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2SB1132P-G概述

Transistor

2SB1132P-G规格参数

参数名称	属性值
包装说明	,
Reach Compliance Code	unknow
Base Number Matches	1

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2SB1132

PNP Plastic-Encapsulate Transistors

* “G” Lead(Pb)-Free

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

ABSOLUTE MAXIMUM RATINGS (Ta=25

)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

ICP

Collector Power Dissipation

Junction Temperature, Storage Temperature

* Single pulse Pw = 100ms

Value

-40

-32

-5.0

-1.0

-2.0

0.5

150, -55 to +150

Unit

Vdc

A(DC)

A (Pulse)*

, Tstg

DEVICE MARKING

2SB1132P=BAP, 2SB1132Q=BAQ, 2SB1132R=BAR

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Base Breakdown Voltage (IC= -50 uAdc, I E =0)

Collector-Emitter Breakdown Voltage (IC = -1 mAdc, IB =0)

Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC =0)

Collector Cutoff Current (VCB= -20Vdc, IE=0)

Emitter Cutoff Current (VEB= -4.0 Vdc, IC =0)

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

Min

-40

-32

-5.0

Max

-0.5

Unit

Vdc

uAdc

WEITRON

http://www.weitron.com.tw

2SB1132P-G相似产品对比

	2SB1132P-G	2SB1132Q-G	2SB1132R-G
描述	Transistor	Transistor	Transistor
Reach Compliance Code	unknow	unknow	unknow
Base Number Matches	1	1	1

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