MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21125/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts, I
DQ
= 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at
±
5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power — 20 Watts
Efficiency — 18%
Gain — 13 dB
IM3 — –43 dBc
ACPR — –45 dBc
•
100% Tested under 2–carrier W–CDMA
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW)
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21125
MRF21125S
MRF21125SR3
2170 MHz, 125 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
(NI–880)
(MRF21125)
CASE 465C–02, STYLE 1
(NI–880S)
(MRF21125S)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, –0.5
330
1.89
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.53
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100
µAdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 300
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 1300 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 1 A)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
5.4
—
pF
g
fs
V
GS(th)
V
GS(Q)
V
DS(on)
—
2
2.5
—
10.8
—
3.9
0.12
—
4
4.5
—
S
Vdc
Vdc
Vdc
V
(BR)DSS
I
GSS
I
DSS
65
—
—
—
—
—
—
1
10
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth.
Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2–carrier W–CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2–carrier W–CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2–carrier W–CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 –15 MHz and f2 +15 MHz referenced to
carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2–carrier W–CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 –10 MHz and f2 +10 MHz referenced to
carrier channel power.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 20 W Avg, 2–carrier W–CDMA, I
DQ
= 1600 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170 MHz,
VSWR = 5:1, All Phase Angles at Frequency of Test)
(1) Part is internally matched both on input and output.
G
ps
12
13
—
dB
η
17
18
—
%
IM3
—
–43
–40
dBc
ACPR
—
–45
–40
dBc
IRL
—
–12
–9.0
dB
Ψ
No Degradation In Output Power
Before and After Test
MRF21125 MRF21125S MRF21125SR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
TYPICAL TWO–TONE PERFORMANCE
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 125 W PEP, I
DQ
= 1600 mA, f1 = 2110 MHz,
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
TYPICAL CW PERFORMANCE
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f1 = 2170.0 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 125 W CW, I
DQ
= 1600 mA, f = 2170.0 MHz)
G
ps
η
—
—
11.5
46
—
—
dB
%
G
ps
—
12
—
dB
Symbol
Min
Typ
Max
Unit
η
—
34
—
%
IMD
—
–30
—
dBc
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
3
B1
V
GG
+
R4
W1
C5
Z6
Z7
RF
OUTPUT
C6
C7
C8
C9
C10
+
C11
+
C12
C13
V
DD
+
C14
R1
R2
+
C2
C3
+
C4
R3
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
DUT
Z8
Z9
Z10
Z11
Z12
C15
Z13
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
1.212″ x 0.082″ Microstrip
0.236″ x 0.082″ Microstrip
0.086″ x 0.254″ Microstrip
0.357″ x 0.082″ Microstrip
0.274″ x 1.030″ Microstrip
0.466″ x 0.050″ Microstrip
0.501″ x 0.050″ Microstrip
0.600″ x 1.056″ Microstrip
Z9
Z10
Z11
Z12
Z13
Raw Board
Material
0.179″ x 0.219″ Microstrip
0.100″ x 0.336″ Microstrip
0.534″ x 0.142″ Microstrip
0.089″ x 0.080″ Microstrip
0.620″ x 0.080″ Microstrip
0.030″ Glass Teflon
, 2 oz Copper,
3″ x 5″ Dimensions,
Arlon GX0300–55–22,
ε
r
= 2.55
Figure 1. MRF21125 Test Circuit Schematic
Table 1. MRF21125 Test Circuit Component Designations and Values
Designators
B1
C1
C2, C4, C11, C12
C3, C7
C5, C14
C6
C8
C9
C10
C13
C15
C16
R1
R2
R3
R4
W1
Description
Ferrite Bead (Square), Fair Rite #2743019447
9.1 pF Chip Capacitor, B Case, ATC #100B9R1CCA500X
22
µF,
35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394
20000 pF Chip Capacitors, B Case, ATC #100B203JCA50X
5.1 pF Chip Capacitors, B Case, ATC #100B5R1CCA500X
100000 pF Chip Capacitor, B Case, ATC #100B104JCA50X
10000 pF Chip Capacitor, B Case, ATC #100B103JCA50X
7.5 pF Chip Capacitor, B Case, ATC #100B7R5CCA500X
1.2 pF Chip Capacitor, B Case, ATC #100B1R2CCA500X
0.1
µF
Chip Capacitor, Kemet #CDR33BX104AKWS
16 pF Chip Capacitor, B Case, ATC #100B160KP500X
0.6 – 4.5 pF Variable Capacitor, Johanson Gigatrim #27271SL
1.0 kΩ, 1/8 W Chip Resistor
560 kΩ, 1/8 W Chip Resistor
4.7
Ω,
1/8 W Chip Resistor
12
Ω,
1/8 W Chip Resistor
Solid Copper Buss Wire, 16 AWG
MRF21125 MRF21125S MRF21125SR3
4
MOTOROLA RF DEVICE DATA
VGG
C11
V DD
C9 C10
B1
R2
C2 C3 C4
R1
R3
C5
C8 R4
C7
C6
C12
W1
C13
C14
C15
C1
C16
MRF21125 Rev 5
Figure 2. MRF21125 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21125 MRF21125S MRF21125SR3
5
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