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1N4006G

产品描述SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小39KB,共2页
制造商EIC [EIC discrete Semiconductors]
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1N4006G概述

SILICON, SIGNAL DIODE

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1N4001G - 1N4007G
BY133G
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
1N
1N
1N
1N
1N
1N
1N
4001G 4002G 4003G 4004G 4005G 4006G 4007G
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
1.0
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
420
600
560
800
700
1000
BY
133G
1300
910
1300
UNIT
V
V
V
A
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005

1N4006G相似产品对比

1N4006G 1N4001G 1N4003G 1N4004G 1N4005G 1N4002G BY133G
描述 SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
端子数量 - 2 - 2 2 - 2
元件数量 - 1 - 1 1 - 1
端子形式 - 线 - WIRE WIRE - WIRE
端子位置 - AXIAL - AXIAL AXIAL - AXIAL
二极管元件材料 - - SILICON SILICON - SILICON
二极管类型 - 信号二极管 信号二极管 RECTIFIER DIODE RECTIFIER DIODE SIGNAL DIODE RECTIFIER DIODE
最大重复峰值反向电压 - 50 V - 400 V 600 V - 1300 V

 
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