1N4004G: 产品描述1 A, 400 V, SILICON, SIGNAL DIODE, DO-41; 产品类别分立半导体二极管; 文件大小39KB，共2页; 制造商EIC [EIC discrete Semiconductors]; 标准

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1N4004G在线购买

供应商	器件名称	价格	最低购买	库存
	1N4004G	-	-	点击查看	点击购买

1N4004G概述

1 A, 400 V, SILICON, SIGNAL DIODE, DO-41

1 A, 400 V, 硅, 信号二极管, DO-41

1N4004G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	EIC [EIC discrete Semiconductors]
零件包装代码	DO-41
包装说明	O-PALF-W2
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	HIGH RELIABILITY
最小击穿电压	400 V
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1 V
JEDEC-95代码	DO-41
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	30 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最大重复峰值反向电压	400 V
最大反向电流	5 µA
反向测试电压	400 V
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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1N4001G - 1N4007G

BY133G

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

FEATURES :

Glass passivated chip

High current capability

High reliability

Low reverse current

Low forward voltage drop

Pb / RoHS Free

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

DO - 41

0.107 (2.7)

0.080 (2.0)

1.00 (25.4)

MIN.

0.205 (5.2)

0.166 (4.2)

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.34 gram

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 75

°C

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

Maximum Forward Voltage at I

= 1.0 Amp.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL

RRM

RMS

F(AV)

FSM

R(H)

STG

4001G 4002G 4003G 4004G 4005G 4006G 4007G

100

200

400

600

800

1000

100

140

200

280

400

1.0

5.0

- 65 to + 175

420

600

560

800

700

1000

133G

1300

910

1300

UNIT

µA

°C/W

°C

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

Storage Temperature Range

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

Page 1 of 2

Rev. 02 : March 25, 2005

1N4004G相似产品对比

	1N4004G	1N4001G	1N4003G	1N4005G	1N4006G	1N4002G	BY133G
描述	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL	SIGNAL DIODE	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	SILICON, SIGNAL DIODE	SIGNAL DIODE	1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL
二极管元件材料	SILICON	硅	-	SILICON	-	-	SILICON
二极管类型	RECTIFIER DIODE	信号二极管	信号二极管	RECTIFIER DIODE	-	SIGNAL DIODE	RECTIFIER DIODE
元件数量	1	1	-	1	-	-	1
端子数量	2	2	-	2	-	-	2
最大重复峰值反向电压	400 V	50 V	-	600 V	-	-	1300 V
端子形式	WIRE	线	-	WIRE	-	-	WIRE
端子位置	AXIAL	AXIAL	-	AXIAL	-	-	AXIAL

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